Memory effects in MOS capacitors with silicon quantum dots (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Memory effects in MOS capacitors with silicon quantum dots (Articolo in rivista) (literal)

Anno

• 2001-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/S0928-4931(01)00220-X (literal)

Alternative label

• Crupi I, Lombardo S, Spinella C, Gerardi C, Fazio B, Vulpio M, Melanotte M, Liao Y, Bongiorno C (2001)
  Memory effects in MOS capacitors with silicon quantum dots
  in Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Crupi I, Lombardo S, Spinella C, Gerardi C, Fazio B, Vulpio M, Melanotte M, Liao Y, Bongiorno C (literal)

Pagina inizio

• 283 (literal)

Pagina fine

• 285 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 15 (literal)

Rivista

• Materials science & engineering. C, Biomimetic materials, sensors and systems (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, I-95121 Catania, Italy; STMicroelectronics, I-95121 Catania, Italy (literal)

Titolo

• Memory effects in MOS capacitors with silicon quantum dots (literal)

Abstract

• To form crystalline Si dots embedded in SiO2 We have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O-2 Then the materials have been annealed in N-2 ambient at temperatures between 950 degreesC and 1100 degreesC. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2 The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory function of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers as insulator and with an n(+) polycrystalline silicon gate. The operations of write and storage are clearly detected by measurements of hysteresis in capacitance- voltage characteristics. A model which explains both the occurrence of steady-state conduction through the SiO2/SRO/SiO2, stack at a relatively low voltage and the shift of flat-band voltage is presented and discussed. (literal)

Prodotto di

• TRASPORTO IN MOS SCALATI E NUOVE STRUTTURE (MD.P05.008.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Istituto per i processi chimico-fisici (IPCF) (Istituto)

Autore CNR

• ROSARIO CORRADO SPINELLA (Persona)
• SALVATORE LOMBARDO (Persona)
• ISODIANA CRUPI (Unità di personale interno)
• CORRADO BONGIORNO (Unità di personale interno)
• BARBARA FAZIO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto per i processi chimico-fisici (IPCF) (Istituto)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• TRASPORTO IN MOS SCALATI E NUOVE STRUTTURE (MD.P05.008.001) (Modulo)

Autore CNR di

• BARBARA FAZIO (Unità di personale interno)
• ISODIANA CRUPI (Unità di personale interno)
• SALVATORE LOMBARDO (Persona)
• ROSARIO CORRADO SPINELLA (Persona)
• CORRADO BONGIORNO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. C, Biomimetic materials, sensors and systems (Rivista)