Electrical stability in self-aligned p-channel polysilicon Thin Film Transistors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Electrical stability in self-aligned p-channel polysilicon Thin Film Transistors (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Alternative label

• P. Gaucci, L. Mariucci, A. Valletta, A. Pecora and G. Fortunato, F. Templier (2007)
  Electrical stability in self-aligned p-channel polysilicon Thin Film Transistors
  in Thin solid films (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• P. Gaucci, L. Mariucci, A. Valletta, A. Pecora and G. Fortunato, F. Templier (literal)

Pagina inizio

• 7571 (literal)

Pagina fine

• 7575 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 515 (literal)

Rivista

• Thin solid films (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR, IMM, I-00156 Rome, Italy 2. CEA, LETS, Dept IHS, F-38054 Grenoble, France (literal)

Titolo

• Electrical stability in self-aligned p-channel polysilicon Thin Film Transistors (literal)

Abstract

• In this work we present a study of the electrical stability of self-aligned p-channel thin film transitor fabricated using excimer laser annealing. The electrical stability was tested performing different bias-temperature stress experiments and we found an increased degradation in devices with large channel width and also for increasing temperatures in the bias-temperature stress performed at zero drain voltage. These results clearly point out to instabilities related to self-heating effects of the devices, showing a substantial increase of the threshold voltage and degradation of the subthreshold region, as well as a transconductance (G) increase. From extensive analysis of the phenomenon through numerical simulations, we found that the bias-temperature-stress effects, including G,, overshoot, could be perfectly reproduced assuming that degradation is confined in a narrow channel region near the source and/or drain contacts. From the present results we conclude that self-heating triggers some degradation of a spatially limited region of the channel, presumably related to residual damage of the ion-implantation process. (literal)

Prodotto di

• Dispositivi per elettronica di larga area (MD.P05.001.001) (Modulo)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Dispositivi per elettronica di larga area (MD.P05.001.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANTONIO VALLETTA (Unità di personale interno)
• GUGLIELMO FORTUNATO (Persona)
• ALESSANDRO PECORA (Persona)
• LUIGI MARIUCCI (Unità di personale interno)
• PAOLO GAUCCI (Unità di personale esterno)

Incoming links:

Autore CNR di

• ALESSANDRO PECORA (Persona)
• GUGLIELMO FORTUNATO (Persona)
• ANTONIO VALLETTA (Unità di personale interno)
• LUIGI MARIUCCI (Unità di personale interno)
• PAOLO GAUCCI (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Dispositivi per elettronica di larga area (MD.P05.001.004) (Modulo)
• Dispositivi per elettronica di larga area (MD.P05.001.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Thin solid films (Rivista)