Multiscale self-organization of the organic semiconductor alpha-quinquethiophene (Articolo in rivista)

Type
Label
  • Multiscale self-organization of the organic semiconductor alpha-quinquethiophene (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Melucci M., Gazzano M., Barbarella G., Cavallini M., Biscarini F., Maccagnani P., Ostoja P. (2003)
    Multiscale self-organization of the organic semiconductor alpha-quinquethiophene
    in Journal of the American Chemical Society (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Melucci M., Gazzano M., Barbarella G., Cavallini M., Biscarini F., Maccagnani P., Ostoja P. (literal)
Pagina inizio
  • 10266 (literal)
Pagina fine
  • 10274 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 125 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • Studio delle proprietà di autoorganizzazione di film sottili di alfa-quinquetiofene (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-ISOF, CNR-ISMN, CNR-IMM (literal)
Titolo
  • Multiscale self-organization of the organic semiconductor alpha-quinquethiophene (literal)
Abstract
  • We show that thin films grown by vacuum sublimation, or formed by melted powders, of semiconductor alpha-quinquethiophene (T5) exhibit a hierarchical self-affinity organization that spans scales from tens of nanometers to hundreds of micrometers. T5 organization was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), and optical microscopy. XRD showed that vacuum-evaporated T5 films were characterized by a preferred orientation of the h00 planes parallel to the glass substrate, Melting of the films followed by rapid quenching to room temperature led to the formation of micrometer-sized, single-crystal-like structures, characterized by uniaxially aligned stripes. XRD proved that the melting-quenching process enhanced molecular ordering and increased the size of domains with the molecule's long axes tilted by about 65degrees with respect to the substrate plane and piled up side-by-side along parallel columns. AFM measurements on the melt-quenched structures showed that a hierarchical architecture was built by reiteration across multiple length scales of the same recurring motif. Because of the tendency of T5 to form highly crystalline vacuum-evaporated thin films, a field-effect hole mobility comparable to state-of-the-art FET mobility of alpha-sexithiophene films was reached, without any attempt to optimize deposition conditions. (literal)
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