http://www.cnr.it/ontology/cnr/individuo/prodotto/ID169642
Synthesis of heteroepytaxial 3C-SiC by means of PLD (Articolo in rivista)
- Type
- Label
- Synthesis of heteroepytaxial 3C-SiC by means of PLD (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Monaco G.; Garoli D.; Natali M.; Pelizzo M.G.; Nicolosi P. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Scopu (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1,4,5 :LUXOR Laboratory, CNR, IFN, Via Trasea 4, Padova, Italy /
2 : Physical Department G. Galilei, University of Padova, Via Marzolo 8, Padova, Italy /
2 : TASC Natl. Lab., CNR, INFM, Trieste, Italy /
2 : LANN Laboratory for Nanofabrication of Nanodevices, Corso Stati Uniti 4, Padova, Italy /
2,3 : CNR, ICIS, Corso Stati Uniti 4, Padova, Italy /
1,4,5 : Department of Information Engineering, University of Padova, Via Gradenigo 6/b, Padova, Italy (literal)
- Titolo
- Synthesis of heteroepytaxial 3C-SiC by means of PLD (literal)
- Abstract
- Thin films of silicon carbide (SiC) have been prepared by means of pulsed laser deposition (PLD) on sapphire (Al(2)O(3)) and Si(100) substrates with a Nd-YAG laser 1064 nm. We achieved the growth of cubic silicon carbide (3C-SiC) films at the temperatures of 650A degrees C from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The use of off-axis PLD method placing the sample at 90A degrees with respect to the target leads to a good quality smooth film. (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Insieme di parole chiave di
