http://www.cnr.it/ontology/cnr/individuo/prodotto/ID169392
Field-effect transistors with organic semiconductor layers assembled from aqueous colloidal nanocomposites (Articolo in rivista)
- Type
- Label
- Field-effect transistors with organic semiconductor layers assembled from aqueous colloidal nanocomposites (Articolo in rivista) (literal)
- Anno
- 2007-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1021/la062371k (literal)
- Alternative label
Dionigi C., Stoliar P., Porzio W., Destri S., Cavallini M., Bigotti I., Brillante A., Biscarini F. (2007)
Field-effect transistors with organic semiconductor layers assembled from aqueous colloidal nanocomposites
in Langmuir; ACS, American chemical society, Washington, DC (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Dionigi C., Stoliar P., Porzio W., Destri S., Cavallini M., Bigotti I., Brillante A., Biscarini F. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- C. Dionigi ISMN-Bologna, P. Stoliar- ISMN-Bologna
W. Porzio- Ismac-Milano, S. Destri Ismac-Milano,
Massimiliano Cavallini ISMN- Bologna,
I. Bigotti - Dipartimento di Chimica Fisica e Inorganica and INSTM-UdR Bologna, UniVersity of Bologna,
A.Brillante- Dipartimento di Chimica Fisica e Inorganica and INSTM-UdR Bologna,
F. Biscarini ISMN-Bologna (literal)
- Titolo
- Field-effect transistors with organic semiconductor layers assembled from aqueous colloidal nanocomposites (literal)
- Abstract
- We demonstrate field effect transistors based on organic semiconductor molecules dispersed in a self-organized
polystyrene (PS) latex bead matrix. An aqueous colloidal composite made of PS and tetrahexylsexithiophene (H4T6)
is deposited with a micropipet into the channel of a bottom-contact field effect transistor. The beads self-organize
into a network whose characteristic distances are governed by their packing. The semiconductor molecules crystallize
in the interstitial voids, leading to the growth of large interconnected domains. Depending on the bead size and the
ratio between H4T6 and PS, the fraction of the different phases in the polymorph can be controlled. In the transistors
where the H4T6 metastable \"red phase\" is the largest, the device response and the charge mobility are comparable
to those of sexithienyl thin films grown by high-vacuum sublimation. (literal)
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