http://www.cnr.it/ontology/cnr/individuo/prodotto/ID169374
Erbium-activated HfO2-based waveguides for photonics (Articolo in rivista)
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- Erbium-activated HfO2-based waveguides for photonics (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0925-3467(03)00261-1 (literal)
- Alternative label
R.R. Gonçalves; G. Carturan; L. Zampedri; M. Ferrari; M. Montagna; G.C. Righini; S. Pelli; S.J.L. Ribeiro; Y. Messaddeq (2004)
Erbium-activated HfO2-based waveguides for photonics
in Optical materials (Amst., Print); Elsevier Science Publishers, Amsterdam (Paesi Bassi)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- R.R. Gonçalves; G. Carturan; L. Zampedri; M. Ferrari; M. Montagna; G.C. Righini; S. Pelli; S.J.L. Ribeiro; Y. Messaddeq (literal)
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- ISI Web of Science (WOS) (literal)
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- Rogeria R. Goncalves [a], Giovanni Carturan [a], Maurizio Montagna [b], Maurizio Ferrari [d], Luca Zampedri [d], Stefano Pelli [c], Giancarlo C. Righini [c],
Sidney J.L. Ribeiro [e], Younes Messaddeq [e]
[a] Dipartimento di Ingegneria dei Materiali, Università di Trento, Via Mesiano 77, I-38050 Trento, Italy
[b] Dipartimento di Fisica and INFM, Universit?a di Trento, via Sommarive 14, I-38050 Povo, Trento, Italy
[c] CNR-IFAC Istituto di Fisica Applicata ''Nello Carrara'', via Panciatichi 64, I-50127 Firenze, Italy
[d] CNR-IFN Istituto di Fotonica e Nanotecnologie, via Sommarive 14, I-38050 Povo, Trento, Italy
[e] Institute of Chemistry-UNESP, P.O. Box 355, 14801-970, Araraquara, SP, Brazil (literal)
- Titolo
- Erbium-activated HfO2-based waveguides for photonics (literal)
- Abstract
- Silica-based sol-gel waveguides activated by Er3+ ions are attractive materials for integrated optic devices. 70SiO(2)-30HfO(2) planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-get route. The films were deposited on v-SiO2 and silica-on-silicon substrates, using dip-coating technique. The waveguides show a homogeneous surface morphology, high densification degree and uniform refractive index across the thickness. Emission in the C-telecommunication band was observed at room temperature for ill the samples upon excitation at 980 nm. The shape is found to be almost independent on erbium content, with a FWHM between 44 and 48 nm. The I-4(13/2) level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 and 6.7 ms, depending on the erbium concentration. The waveguide deposited on silica-on-silicon substrate supports one single propagation mode at 1.5 mum with a confinement coefficient of 0.85, and a losses of about 0.8 dB/cm at 632.8 nm. (literal)
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