Erbium-activated HfO2-based waveguides for photonics (Articolo in rivista)

Type
Label
  • Erbium-activated HfO2-based waveguides for photonics (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0925-3467(03)00261-1 (literal)
Alternative label
  • R.R. Gonçalves; G. Carturan; L. Zampedri; M. Ferrari; M. Montagna; G.C. Righini; S. Pelli; S.J.L. Ribeiro; Y. Messaddeq (2004)
    Erbium-activated HfO2-based waveguides for photonics
    in Optical materials (Amst., Print); Elsevier Science Publishers, Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • R.R. Gonçalves; G. Carturan; L. Zampedri; M. Ferrari; M. Montagna; G.C. Righini; S. Pelli; S.J.L. Ribeiro; Y. Messaddeq (literal)
Pagina inizio
  • 131 (literal)
Pagina fine
  • 139 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 25 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Rogeria R. Goncalves [a], Giovanni Carturan [a], Maurizio Montagna [b], Maurizio Ferrari [d], Luca Zampedri [d], Stefano Pelli [c], Giancarlo C. Righini [c], Sidney J.L. Ribeiro [e], Younes Messaddeq [e] [a] Dipartimento di Ingegneria dei Materiali, Università di Trento, Via Mesiano 77, I-38050 Trento, Italy [b] Dipartimento di Fisica and INFM, Universit?a di Trento, via Sommarive 14, I-38050 Povo, Trento, Italy [c] CNR-IFAC Istituto di Fisica Applicata ''Nello Carrara'', via Panciatichi 64, I-50127 Firenze, Italy [d] CNR-IFN Istituto di Fotonica e Nanotecnologie, via Sommarive 14, I-38050 Povo, Trento, Italy [e] Institute of Chemistry-UNESP, P.O. Box 355, 14801-970, Araraquara, SP, Brazil (literal)
Titolo
  • Erbium-activated HfO2-based waveguides for photonics (literal)
Abstract
  • Silica-based sol-gel waveguides activated by Er3+ ions are attractive materials for integrated optic devices. 70SiO(2)-30HfO(2) planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-get route. The films were deposited on v-SiO2 and silica-on-silicon substrates, using dip-coating technique. The waveguides show a homogeneous surface morphology, high densification degree and uniform refractive index across the thickness. Emission in the C-telecommunication band was observed at room temperature for ill the samples upon excitation at 980 nm. The shape is found to be almost independent on erbium content, with a FWHM between 44 and 48 nm. The I-4(13/2) level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 and 6.7 ms, depending on the erbium concentration. The waveguide deposited on silica-on-silicon substrate supports one single propagation mode at 1.5 mum with a confinement coefficient of 0.85, and a losses of about 0.8 dB/cm at 632.8 nm. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Editore di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it