Lead-free ferroelectric thin films obtained by pulsed laser deposition (Articolo in rivista)

Type
Label
  • Lead-free ferroelectric thin films obtained by pulsed laser deposition (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1007/s00339-010-5933-4 (literal)
Alternative label
  • Scarisoreanu N.D. (a); Craciun F. (b); Chis A. (a); Birjega R. (a); Moldovan A. (a); Galassi C. (c); Dinescu M. (a) (2010)
    Lead-free ferroelectric thin films obtained by pulsed laser deposition
    in Applied physics. A, Materials science & processing (Print); SPRINGER-VERLAG, WIEN (Austria)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Scarisoreanu N.D. (a); Craciun F. (b); Chis A. (a); Birjega R. (a); Moldovan A. (a); Galassi C. (c); Dinescu M. (a) (literal)
Pagina inizio
  • 747 (literal)
Pagina fine
  • 751 (literal)
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  • http://www.springerlink.com/content/069u6053v60g8w2l/ (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 101 (literal)
Rivista
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  • In: Applied Physics A-Materials Science & Processing, vol. 101 pp. 747 - 751. Springer, 2010. fasc. (4). From the issue entitled \"Special Issue: “Materials Growth by Pulsed Laser Deposition”\". Springer. (literal)
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  • 5 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a NILPRP, P.O. Box MG-16, Magurele-Bucharest 77125, Romania b CNR-Istituto dei Sistemi Complessi, Area della Ricerca Roma-Tor Vergata, Via del Fosso del Cavaliere 100, Rome 00133, Italy c CNR-ISTEC, Via Granarolo 64, Faenza 48018, Italy (literal)
Titolo
  • Lead-free ferroelectric thin films obtained by pulsed laser deposition (literal)
Abstract
  • Na0.5Bi0.5TiO3-BaTiO3 (NBT-BT) thin films grown by pulsed laser deposition have been investigated by X-ray diffraction, scanning electron microscopy, and dielectric spectroscopy in order to clarify the role of substrate temperature on crystalline structure, grain morphology, and dielectric properties. We have shown that the structural and dielectric properties of NBT-BT thin films with composition at morphotropic phase boundary (6% BT) critically depend on the substrate temperature: small variations of this parameter induce structural changes, shifting the morphotropic phase boundary toward tetragonal or rhombohedral side. Higher deposition temperature (1000 K) favor the formation of rhombohedral phase, films deposited at 923 K and 973 K have tetragonal symmetry at room temperature. Grains morphology depends also on the deposition temperature. Atomic force micrographs show grains with square or rectangular shape in a compact structure for films grown at lower temperatures, while grains with triangular shape in a porous structure are observed for films grown at 1000 K. Dielectric spectroscopy measurements evidenced the phase transition between ferroelectric and antiferroelectric phase at 370 K. Films grown at 1000 K shown low electrical resistivity due to their porous structure. High dielectric constant values (about 800 at room temperature and 2700 at 570 K) have been obtained for films grown at temperatures up to 973 K. (literal)
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