http://www.cnr.it/ontology/cnr/individuo/prodotto/ID169142
FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes (Articolo in rivista)
- Type
- Label
- FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Alternative label
Ostoja P, Maccagnani P, Gazzano M, Cavallini M, Kengne JC, Kshirsagar R, Biscarini F, Melucci M, Zambianchi M, Barbarella G (2004)
FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes
in Synthetic metals
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Ostoja P, Maccagnani P, Gazzano M, Cavallini M, Kengne JC, Kshirsagar R, Biscarini F, Melucci M, Zambianchi M, Barbarella G (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR, Inst Organ Synth & Photoreactiv, I-40129 Bologna, Italy; CNR, Inst Microelect & Microsyst, I-40129 Bologna, Italy; CNR, Inst Nanostruct Mat Studies, I-40129 Bologna, Italy (literal)
- Titolo
- FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes (literal)
- Abstract
- Bottom contact FET devices were realized, using vacuum evaporated thin films of unsubstituted quinquethiophene and two modified derivatives deposited at different substrate temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) data on thin films deposited in the same conditions are reported and related to the electrical characteristics of the devices. (literal)
- Prodotto di
- Autore CNR
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