FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes (Articolo in rivista)

Type
Label
  • FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ostoja P, Maccagnani P, Gazzano M, Cavallini M, Kengne JC, Kshirsagar R, Biscarini F, Melucci M, Zambianchi M, Barbarella G (2004)
    FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes
    in Synthetic metals
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ostoja P, Maccagnani P, Gazzano M, Cavallini M, Kengne JC, Kshirsagar R, Biscarini F, Melucci M, Zambianchi M, Barbarella G (literal)
Pagina inizio
  • 243 (literal)
Pagina fine
  • 250 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 146 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, Inst Organ Synth & Photoreactiv, I-40129 Bologna, Italy; CNR, Inst Microelect & Microsyst, I-40129 Bologna, Italy; CNR, Inst Nanostruct Mat Studies, I-40129 Bologna, Italy (literal)
Titolo
  • FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes (literal)
Abstract
  • Bottom contact FET devices were realized, using vacuum evaporated thin films of unsubstituted quinquethiophene and two modified derivatives deposited at different substrate temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) data on thin films deposited in the same conditions are reported and related to the electrical characteristics of the devices. (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it