Faceting of InAs-InSb Heterostructured Nanowires (Articolo in rivista)

Type
Label
  • Faceting of InAs-InSb Heterostructured Nanowires (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/cg1006814 (literal)
Alternative label
  • Lugani L. a; Ercolani D. ab; Rossi F. c; Salviati G. c; Beltram F. ab; Sorba L. ab (2010)
    Faceting of InAs-InSb Heterostructured Nanowires
    in Crystal growth & design; ACS, American chemical society, Washington, DC (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lugani L. a; Ercolani D. ab; Rossi F. c; Salviati G. c; Beltram F. ab; Sorba L. ab (literal)
Pagina inizio
  • 4038 (literal)
Pagina fine
  • 4042 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 10 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Crystal Growth & Design, vol. 10 (9) pp. 4038 - 4042. American Chemical Society, 2010. Acknowledgement: We acknowledge financial support from Monte dei Paschi di Siena with the project \"Implementazione del laboratorio di crescita dedicato alla sintesi di nanofili a semiconduttore\", the bilateral project of Minister degli Alfari Esteri \"Nanocharacterization of nanowires, nanomagnets and laser diodes for sensors, optoelectronics and data storage (N3)\", the EU program NODE 015783 and the FIRB project prot. RBIN067A39_002. (literal)
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  • 9 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • a Scuola Normale Super Pisa, NEST, I-56127 Pisa, Italy ; b Ist Nanosci CNR, NEST, I-56127 Pisa, Italy; c IMEM CNR, I-43010 Parma, Italy (literal)
Titolo
  • Faceting of InAs-InSb Heterostructured Nanowires (literal)
Abstract
  • We report on the morphology of InAs-InSb heterostructured nanowires grown by Au-assisted chemical beam epitaxy. Using scanning and transmission electron microscopy, along with high angle annular dark field image analysis, we show that the hexagons defining the cross section of the two segments of the nanowires are rotated one with respect to the other by 30° around the growth direction and that the corners of these hexagons are rounded off by six small facets. Six additional facets that are not parallel to the growth direction are found in the InSb segment at the InAs-InSb interface and are indexed. Finally, the relation between the dimensions of the two segments composing the nanowires is discussed quantitatively. (literal)
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