Plasma deposition of hydrogenated diamond like carbon films from CH4-Ar mixtures (Articolo in rivista)

Type
Label
  • Plasma deposition of hydrogenated diamond like carbon films from CH4-Ar mixtures (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.surfcoat.2003.10.044 (literal)
Alternative label
  • G. Cicala; P. Bruno; A.M.Losacco; G.Mattei (2004)
    Plasma deposition of hydrogenated diamond like carbon films from CH4-Ar mixtures
    in Surface & coatings technology; Elsevier, Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Cicala; P. Bruno; A.M.Losacco; G.Mattei (literal)
Pagina inizio
  • 222 (literal)
Pagina fine
  • 226 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Surface and Coatings Technology Volumes 180-181, 1 March 2004, Pages 222-226 Proceedings of Symposium G on Protective Coatings and Thin Films-03, of the E-MRS 2003 Spring Conference (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 180 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • v. 180-181. Elsevier. Proceedings of Symposium G on Protective Coatings and Thin Films-03, of the E-MRS 2003 Spring Conference. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMIP (literal)
Titolo
  • Plasma deposition of hydrogenated diamond like carbon films from CH4-Ar mixtures (literal)
Abstract
  • Hydrogenated diamond-like carbon coatings have been deposited from CH4 radiofrequency plasmas. The effect of the argon addition to the precursor CH4 gas has been investigated. The argon dilution has been found to influence the plasma phase and the structural, optical and mechanical properties of the films. The plasma phase has been monitored and analyzed by optical emission spectroscopy. In particular, it is shown that the prevalence of H*, Ar+*, C2* and H2*, CH* emitting species are observed in Ar-rich and CH4-rich CH4-Ar plasmas, respectively. Furthermore, it is shown that simultaneous sputter-etching and growth processes occur and in Ar-rich CH4-Ar mixtures the sputter-etching process prevails on the growth process. A well-defined transition from sputter-etching to growth process is localized at 15% methane in the feeding mixture. (literal)
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