http://www.cnr.it/ontology/cnr/individuo/prodotto/ID169080
Fabrication of RF-MEMS switches on LTCC substrates using PECVD a-Si as sacrificial layer (Articolo in rivista)
- Type
- Label
- Fabrication of RF-MEMS switches on LTCC substrates using PECVD a-Si as sacrificial layer (Articolo in rivista) (literal)
- Anno
- 2007-01-01T00:00:00+01:00 (literal)
- Alternative label
Cianci E, Coppa A, Foglietti V, Dispenza M, Buttiglione R, Fiorello AM, Marcelli R, Catoni S, Pochesci D (2007)
Fabrication of RF-MEMS switches on LTCC substrates using PECVD a-Si as sacrificial layer
in Microelectronic engineering
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Cianci E, Coppa A, Foglietti V, Dispenza M, Buttiglione R, Fiorello AM, Marcelli R, Catoni S, Pochesci D (literal)
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- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR, IFN, Inst Photon & Nanotechnol, I-00156 Rome, Italy;
SELEX Sistemi Integrati SpA, Engn Unit, Microelect & Photon Dept, I-00131 Rome, Italy;
CNR-IMM, I-00133 Rome, Italy (literal)
- Titolo
- Fabrication of RF-MEMS switches on LTCC substrates using PECVD a-Si as sacrificial layer (literal)
- Abstract
- RF micromechanical switches are fabricated using dry releasing techniques. LTCC is used as substrate. Amorphous silicon, as an alternative sacrificial layer to silicon dioxide, has been used followed by dry plasma release. The silicon deposition has been optimized to obtain low mechanical stress and allowing thick sacrificial layer deposition. The use of amorphous silicon extends the flexibility of the design of the devices and of the packaging procedure. (literal)
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