MOCVD growth and characterization of cobalt phosphide thin films on InP substrates (Articolo in rivista)

Type
Label
  • MOCVD growth and characterization of cobalt phosphide thin films on InP substrates (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • D. Barreca,1 A. Camporese,2 M. Casarin,3 N. El Habra,2 A. Gasparotto,4 M. Natali,2 G. Rossetto,2 E. Tondello,3 P. Zanella2 (2004)
    MOCVD growth and characterization of cobalt phosphide thin films on InP substrates
    in Journal of the Electrochemical Society
    (literal)
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  • D. Barreca,1 A. Camporese,2 M. Casarin,3 N. El Habra,2 A. Gasparotto,4 M. Natali,2 G. Rossetto,2 E. Tondello,3 P. Zanella2 (literal)
Pagina inizio
  • G638 (literal)
Pagina fine
  • G641 (literal)
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  • 151 (literal)
Rivista
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  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • 1: ISTM-CNR, Sezione di Padova and INSTM, Dipartimento CIMA. University of Padova, I-35131 Padova, Italy 2: ICIS-CNR, I-35127 Padova, Italy 3: Dipartimento CIMA, University of Padova and INSTM, I-35131 Padova, Italy 4: Dipartimento di Fisica ''G. Galilei'', Istituto Nazionale Fisica della Materia (INFM), I-35131 Padova, Italy (literal)
Titolo
  • MOCVD growth and characterization of cobalt phosphide thin films on InP substrates (literal)
Abstract
  • Cobalt phosphide thin films were grown by metal-organic chemical vapor deposition (MOCVD) in H2 atmospheres on InP(001) substrates using bis(-methylcyclopentadienyl)Co(II) [Co(CpMe)2] and phophine (PH3) precursors at 550°C. Film microstructure, composition, and morphology were investigated in detail by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), Rutherford backscattering (RBS), and atomic force microscopy. Films were crystalline and consisted mainly of the orthorhombic CoP phase and some amount of the CoP2 phase. XPS measurements indicate an oxidation state (III) for Co, while the P/Co ratio was found by RBS to lie in the range 1-2. The coatings were highly textured with (202), (103) CoP, and (-311) CoP2 crystal planes parallel to the substrate surface. The root mean square surface roughness was below 10 A; for thicknesses smaller than 20 nm and increased to a maxiumum of 70 A; for a 35 nm thick film. Cobalt and In intermixing was investigated by XPS depyh profiles. (literal)
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