http://www.cnr.it/ontology/cnr/individuo/prodotto/ID168756

Optimization of the performance of CVD diamond electron multipliers (Articolo in rivista)

Type

Articolo in rivista (Classe)
Prodotto della ricerca (Classe)

Label

Optimization of the performance of CVD diamond electron multipliers (Articolo in rivista) (literal)

Anno

2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1016/j.diamond.2005.12.038 (literal)

Alternative label

Trucchi D.M. (a); Scilletta C. (a); Cappelli E. (a); Merli P.G. (b); Zoffoli S. (b); Mattei G. (a); Ascarelli P. (a) (2006)
Optimization of the performance of CVD diamond electron multipliers
in Diamond and related materials; Academic Press Elsevier, Amsterdam (Paesi Bassi)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Trucchi D.M. (a); Scilletta C. (a); Cappelli E. (a); Merli P.G. (b); Zoffoli S. (b); Mattei G. (a); Ascarelli P. (a) (literal)

Pagina inizio

827 (literal)

Pagina fine

832 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

Conference: 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides Location: Toulouse, FRANCE Date: SEP 11-16, 2005 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

15 (literal)

Rivista

Diamond and related materials (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

4-8 (literal)

Note

ISI Web of Science (WOS) (literal)
Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

a) CNR, ISC, I-00016 Monterotondo, Italy; CNR, IMM, I-40129 Bologna, Italy a. CNR-ISC, Via Salaria km 29.300, 00016 Monterotondo Scalo, Rome, Italy; b) CNR-IMM, via Piero Gobetti 101, 40129 Bologna, Italy (literal)

Titolo

Optimization of the performance of CVD diamond electron multipliers (literal)

Abstract

Aiming at the production of image-enhancing devices (electron multipliers) to amplify the backscattered electron signal in scanning electron microscopy, a study of the stationary secondary electron emission from CVD diamond films, irradiated by a high-energy primary electron beam, was performed in order to deepen the understanding of the specific material characteristics that appear to control the electronic emission. An extensive analysis of the secondary electron emission yield 6, as a function of the primary electron beam energy, was performed on polycrystalline CVD samples of different thickness. The emission yield was observed to increase up to a maximum value corresponding to a film thickness of about 15 mu m and to decrease at larger thickness values. The experimental results are analyzed according to a theoretical model previously developed [P. Ascarelli, E. Cappelli, F. Pinzari, M.C. Rossi, S. Salvatori, P.G. Merli, A. Migliori, J. Appl. Phys. 89 (2001) 689] and extended within this work. We realized that the most important material parameter controlling the secondary electron emission yield as a function of the primary electron energy is the mean escape depths of the secondary electrons. The obtained lambda(S) values were found to be adequate to explain the film emission performance dependence on its thickness d. Moreover, using the atomic force microscopy technique and developing an algorithm based on a three-points method to identify the mean orientation of crystal facets in space, we observed that the S(a) (and consequently the secondary electron emission performance) evolution during the growth process may be largely explained by a variation of the film surface mean orientation and a concomitant variation of the film quality. (literal)

Editore