Optimization of ITO layers for applications in a-Si/c-Si heterojunctions solar cells (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Optimization of ITO layers for applications in a-Si/c-Si heterojunctions solar cells (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/S0040-6090(02)01143-4 (literal)

Alternative label

• J. Plà, M. Tamasi, R. Rizzoli, M. Losurdo, E. Centurioni, C. Summonte, F. Rubinelli Pla J., Tamasi M., Rizzoli R., Losurdo M., Centurioni E., Summonte C., Rubinelli F. (2003)
  Optimization of ITO layers for applications in a-Si/c-Si heterojunctions solar cells
  in Thin solid films (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• J. Plà, M. Tamasi, R. Rizzoli, M. Losurdo, E. Centurioni, C. Summonte, F. Rubinelli Pla J., Tamasi M., Rizzoli R., Losurdo M., Centurioni E., Summonte C., Rubinelli F. (literal)

Pagina inizio

• 185 (literal)

Pagina fine

• 192 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 425 (literal)

Rivista

• Thin solid films (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] CNR, IMM, Sez Bologna, I-40129 Bologna, Italy [ 2 ] CNEA, CAC, Grp Energia Solar, RA-1650 San Martin, Buenos Aires, Argentina [ 3 ] Consejo Nacl Invest Cient & Tecn, INTEC, Grp Fis Mat, RA-3000 Santa Fe, Argentina [ 4 ] CNR, IMIP, Sez Bari, I-70126 Bari, Italy (literal)

Titolo

• Optimization of ITO layers for applications in a-Si/c-Si heterojunctions solar cells (literal)

Abstract

• A detailed study of the properties of indium tin oxide (ITO) thin films used as antireflecting front electrodes in a-Si/c-Si heterojunction solar cells is presented. The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applications. The X-ray photoelectron spectroscopy analysis of the deposited films allowed for a correlation between the film composition and the experimental parameters used in the sputtering process. The ITO thickness was optimized considering the thickness of the a-Si emitter layer, its optical characteristics and the heterojunction solar cell spectral response. In our devices, the optimal thickness calculated for the ITO film was in the range 80-95 nm, depending on the solar cell spectral response, and a thickness tolerance of +/-10 nm was found to be suitable to limit the degradation of the device performance. Finally, device simulation results obtained by the 'Analysis of Microelectronic and Photonic Structures' code are reported. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)
• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR

• RITA RIZZOLI (Persona)
• CATERINA SUMMONTE (Persona)
• MARIA LOSURDO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• RITA RIZZOLI (Persona)
• CATERINA SUMMONTE (Persona)
• MARIA LOSURDO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Thin solid films (Rivista)