Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3267488 (literal)

Alternative label

• Begum, N.; Bhatti, A. S.; Jabeen, F.; Rubini, S.; Martelli, F. (2009)
  Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Begum, N.; Bhatti, A. S.; Jabeen, F.; Rubini, S.; Martelli, F. (literal)

Pagina inizio

• 114317 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 106 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. COMSATS Inst Informat Technol, Dept Phys, Ctr Micro & Nano Devices, Islamabad 44000, Punjab Pakistan 2. INFM CNR, Lab Nazl TASC, I-34012 Trieste, Italy 3. CNR, Ist Microelect & Microsistemi, I-00133 Rome, Italy (literal)

Titolo

• Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires (literal)

Abstract

• Micro-Raman spectroscopy is employed to study the phonon confinement in Au- and Mn-catalyzed GaAs and InAs nanowires. The phonon confinement model is used to fit the LO phonon peaks, which also takes into account the contribution to the asymmetry of the line shape due to the presence of surface optical (SO) phonons and structural defects. This also allows us to determine the correlation lengths in these wires, that is the average distance between defects and the defect density in these nanowires. Influence of these defects on the SO phonon is also investigated. A good agreement between the experimental results and the calculations for the SO phonon mode by using the dielectric continuum model is also obtained. (literal)

Prodotto di

• Materiali nanostrutturati per celle fotovoltaiche e dispositivi su larga area (MD.P05.001.005) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P06.017.002 Sintesi e studio di nanostrutture (MD.P06.017.006) (Modulo)

Autore CNR

• FAUSTINO MARTELLI (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali nanostrutturati per celle fotovoltaiche e dispositivi su larga area (MD.P05.001.005) (Modulo)
• MD.P06.017.002 Sintesi e studio di nanostrutture (MD.P06.017.006) (Modulo)

Autore CNR di

• FAUSTINO MARTELLI (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)