Detailed structure of the H-N-H center in GaAsyN1-y revealed by vibrational spectroscopy under uniaxial stress (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Detailed structure of the H-N-H center in GaAsyN1-y revealed by vibrational spectroscopy under uniaxial stress (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.81.233201 (literal)

Alternative label

• Wen, L.; Bekisli, F.; Stavola, M.; Fowler, W. B.; Trotta, R.; Polimeni, A.; Capizzi, M.; Rubini, S.; Martelli, F. (2010)
  Detailed structure of the H-N-H center in GaAsyN1-y revealed by vibrational spectroscopy under uniaxial stress
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Wen, L.; Bekisli, F.; Stavola, M.; Fowler, W. B.; Trotta, R.; Polimeni, A.; Capizzi, M.; Rubini, S.; Martelli, F. (literal)

Pagina inizio

• 233201 (literal)

Pagina fine

• 233201 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 81 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA 2. Lehigh Univ, Sherman Fairchild Lab, Bethlehem, PA 18015 USA 3. Univ Roma La Sapienza, CNISM, I-00185 Rome, Italy 4. Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy 5. CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy (literal)

Titolo

• Detailed structure of the H-N-H center in GaAsyN1-y revealed by vibrational spectroscopy under uniaxial stress (literal)

Abstract

• The H-N-H center in GaAs1-yNy that is responsible for the band-gap shift caused by H has been studied by infrared spectroscopy in conjunction with uniaxial stress and by theory. Rich, microscopic details about its canted structure are obtained. The splitting of the infrared lines confirms the C-1h symmetry of the defect and yields a quantitative value for the canting angle of the center. The reorientation barrier of the defect is estimated from stress-induced reorientation at temperatures near 30 K to be 96 meV. (literal)

Prodotto di

• Materiali nanostrutturati per celle fotovoltaiche e dispositivi su larga area (MD.P05.001.005) (Modulo)
• MD.P06.017.002 Sintesi e studio di nanostrutture (MD.P06.017.006) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FAUSTINO MARTELLI (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali nanostrutturati per celle fotovoltaiche e dispositivi su larga area (MD.P05.001.005) (Modulo)
• MD.P06.017.002 Sintesi e studio di nanostrutture (MD.P06.017.006) (Modulo)

Autore CNR di

• FAUSTINO MARTELLI (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)