Highly Active Junctions Formed in Crystalline Silicon by Infrared Laser Annealing (Contributo in atti di convegno)

Type
Label
  • Highly Active Junctions Formed in Crystalline Silicon by Infrared Laser Annealing (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Mannino G, La Magna A, Privitera V, Christensen J, SVL, Svensson BG (2007)
    Highly Active Junctions Formed in Crystalline Silicon by Infrared Laser Annealing
    in 15th International Conference on Advanced Thermal Processing of Semiconductors, 2007 (RTP 2007), Cannizzaro (Catania)
    (literal)
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  • Mannino G, La Magna A, Privitera V, Christensen J, SVL, Svensson BG (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • We investigated the activation of B in Si by a millisecond annealing process performed by infrared laser annealing. Reference samples were annealed in a lamp based rapid thermal annealing system at 200 °C/s. We found that comparable diffusion length (25nm), the laser annealed samples show a Rs 430 ¿, corresponding to an active dose a factor two higher relative to lamp annealed samples. The laser annealing/activation process, lasting for just a few milliseconds, is likely characterized by the absence of B-interstitial clusters formation and precedes by far the regime known as \"transient diffusion\" with a duration of at least a few seconds at temperatures above 1000°C and which is driven by the formation/dissolution of large clusters involving B atoms. (literal)
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  • IMM-CNR Catania (literal)
Titolo
  • Highly Active Junctions Formed in Crystalline Silicon by Infrared Laser Annealing (literal)
Abstract
  • We investigated the activation of B in Si by a millisecond annealing process performed by infrared laser annealing. Reference samples were annealed in a lamp based rapid thermal annealing system at 200 °C/s. We found that comparable diffusion length (25nm), the laser annealed samples show a Rs 430 ¿, corresponding to an active dose a factor two higher relative to lamp annealed samples. The laser annealing/activation process, lasting for just a few milliseconds, is likely characterized by the absence of B-interstitial clusters formation and precedes by far the regime known as \"transient diffusion\" with a duration of at least a few seconds at temperatures above 1000°C and which is driven by the formation/dissolution of large clusters involving B atoms. (literal)
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