Photoelectrical properties of 1,3 micron emitting InAs quantum dots in InGaAs matrix (Articolo in rivista)

Type
Label
  • Photoelectrical properties of 1,3 micron emitting InAs quantum dots in InGaAs matrix (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • Persano A; Cola A; Vasanelli L; Convertino A; Leo G; Cerri L; Frassanito M C; Viticoli S; (2005)
    Photoelectrical properties of 1,3 micron emitting InAs quantum dots in InGaAs matrix
    in Acta Physica Polonica. A
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Persano A; Cola A; Vasanelli L; Convertino A; Leo G; Cerri L; Frassanito M C; Viticoli S; (literal)
Pagina inizio
  • 381 (literal)
Pagina fine
  • 387 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 107 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM Sez Lecce, I-73100 Lecce, Italy; Univ Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy; CNR, ISMN, Sez Roma, Rome, Italy; INFM, Natl Nanotechnol Lab, I-73100 Lecce, Italy (literal)
Titolo
  • Photoelectrical properties of 1,3 micron emitting InAs quantum dots in InGaAs matrix (literal)
Abstract
  • We present a study of photoelectrical properties of the Stranski-Krastanow InAs quantum dots embedded in an InGaAs matrix with low In content, emitting at about 1.3 mum. The ground-state electron-hole transition of the dots was investigated as a function of the temperature in presence of electric fields parallel and perpendicular to the plane of the dots by photocurrent spectroscopy. Microphotoluminescence measurements were also carried out, allowing us to evidence carrier capture from the GaAs matrix into the dots. (literal)
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