Distribution and generation of traps in SiO2/Al2O3 gate stacks (Articolo in rivista)

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Label
  • Distribution and generation of traps in SiO2/Al2O3 gate stacks (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.microrel.2007.01.013 (literal)
Alternative label
  • Crupi, I; Degraeve, R; Govoreanu, B; Brunco, DP; Roussel, P; Van Houdt, J (2007)
    Distribution and generation of traps in SiO2/Al2O3 gate stacks
    in Microelectronics and reliability; Editore: Elsevier, Oxford (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Crupi, I; Degraeve, R; Govoreanu, B; Brunco, DP; Roussel, P; Van Houdt, J (literal)
Pagina inizio
  • 525 (literal)
Pagina fine
  • 527 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • 14th Workshop on Dielectrics in Microelectronics (WoDiM 2006) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 47 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4-5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Ist Nazl Fis Nucl, CNR, MATIS, I-95129 Catania, Italy; IMEC, B-3001 Louvain, Belgium; IMEC, Intel Assignee, B-3001 Louvain, Belgium (literal)
Titolo
  • Distribution and generation of traps in SiO2/Al2O3 gate stacks (literal)
Abstract
  • In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO2/ Al2O3 n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO2 interface. (C) 2007 Elsevier Ltd. All rights reserved. (literal)
  • In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO2/Al2O3 n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO2 interface. (literal)
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