Plasmonic Gallium Nanoparticles on Polar Semiconductors: Interplay between Nanoparticle Wetting, Localized Surface Plasmon Dynamics, and Interface Charge (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Plasmonic Gallium Nanoparticles on Polar Semiconductors: Interplay between Nanoparticle Wetting, Localized Surface Plasmon Dynamics, and Interface Charge (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1021/la802678y (literal)

Alternative label

• P.C. Wu; M. Losurdo; T.H. Kim, M.M. Giangregorio; G. Bruno; H. O. Everitt; A. S. Brown (2009)
  Plasmonic Gallium Nanoparticles on Polar Semiconductors: Interplay between Nanoparticle Wetting, Localized Surface Plasmon Dynamics, and Interface Charge
  in Langmuir
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• P.C. Wu; M. Losurdo; T.H. Kim, M.M. Giangregorio; G. Bruno; H. O. Everitt; A. S. Brown (literal)

Pagina inizio

• 924 (literal)

Pagina fine

• 930 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 25 (literal)

Rivista

• Langmuir (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA CNR, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy INSTM, I-70126 Bari, Italy (literal)

Titolo

• Plasmonic Gallium Nanoparticles on Polar Semiconductors: Interplay between Nanoparticle Wetting, Localized Surface Plasmon Dynamics, and Interface Charge (literal)

Abstract

• Ga nanoparticles supported on large band gap semiconductors like SiC, GaN, and ZnO are interesting for plasmon-enhanced UV-emitting solid-state devices. We investigate the influence of the polarity of the SiC, GaN, and ZnO wurtzite semiconductors on the wetting of Ga nanoparticles and on the resulting surface plasmon resonance (SPR) by exploiting real time plasmonic ellipsometry. The interface potential between polar semiconductors (SiC, GaN, and ZnO) and plasmonic nanoparticles (gallium) is shown to influence nanoparticle formation dynamics, geometry, and consequently the SPR wavelength. We invoke the Lippman electrowetting framework to elucidate the mechanisms controlling nanoparticle dynamics and experimentally demonstrate that the charge transfer at the Ga nanoparticle/polar semiconductor interface is an intrinsic method for tailoring the nanoparticle plasmon resonance. Therefore, the present data demonstrate that for supported nanoparticles, surface and interface piezoelectric charge of polar semiconductors also affects SPR along with the well-known effect of the media refractive index. (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR

• MARIA LOSURDO (Unità di personale interno)
• MARIA MICHELA GIANGREGORIO (Persona)
• GIOVANNI BRUNO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)
• MARIA MICHELA GIANGREGORIO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Langmuir (Rivista)