DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond (Articolo in rivista)

Type
Label
  • DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.diamond.2009.01.014 (literal)
Alternative label
  • Calvani P. 1; Corsaro A. 1; Girolami M. 1; Sinisi F. 1; Trucchi D.M. 1-6; Rossi M.C. 1; Conte G. 1; Carta S. 2; Giovine E. 2; Lavanga S. 3; Limiti E. 4; Ralchenko V. 5 (2009)
    DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond
    in Diamond and related materials; Elsevier Science SA, Lausanne (Svizzera)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Calvani P. 1; Corsaro A. 1; Girolami M. 1; Sinisi F. 1; Trucchi D.M. 1-6; Rossi M.C. 1; Conte G. 1; Carta S. 2; Giovine E. 2; Lavanga S. 3; Limiti E. 4; Ralchenko V. 5 (literal)
Pagina inizio
  • 786 (literal)
Pagina fine
  • 788 (literal)
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  • 18 (literal)
Rivista
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  • n.5-8. Proceedings of Diamond 2008, the 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide. (literal)
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  • 5-8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • 1) Solid State and Diamond Electronics Lab, Dept. of Electronic Engineering, Roma Tre University, Rome, Italy 2) Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Rome, Italy 3) Selex Sistemi Integrati S.p.A., Italy 4) Dept. of Electronic Engineering, University of Tor Vergata, Rome, Italy 5) General Physics Institute, RAS, Vavilova ul. 38, 119991 Moscow, Russia 6) Institute of Complex Systems, Consiglio Nazionale, delle Ricerche, Montelibretti (RM), Italy (literal)
Titolo
  • DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond (literal)
Abstract
  • DC and RF performance of submicron gate-length metal–semiconductor field effect transistors (MESFETs) fabricated on hydrogen-terminated polycrystalline diamond is investigated in detail for different material electronic quality (grain size in the range 100–200 µm) and device geometry (drain-source channel length in the range 1–3 µm). DC characteristics appear almost independent of both properties, giving maximum drain-source current values in the range 120–140 mA/mm in MESFETs having same gate length (0.2 µm) and gate width (25 µm). The layer properties underneath the hydrogenated surface seem then to affect the DC behaviour to a lesser extent when the same hydrogenation procedure is used. At variance, the electronic quality of diamond layers employed for MESFETs realization largely affects the RF performance, resulting into a low oscillation frequency fmax for a MESFET realized by a self-aligned process (1 µm drain-source channel length) onto low quality diamond polycrystalline film. Such a performance improves to fmax = 35 GHz for devices realized onto large grain polycrystalline diamond, although fabricated without self-aligned gate procedure (3 µm drain-source channel length). These findings are discussed in terms of different roles played by surface hydrogenation, device geometry detail and electronic quality of the polycrystalline diamond substrate for MESFET realization. (literal)
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