http://www.cnr.it/ontology/cnr/individuo/prodotto/ID168437
Interface polaron formation in organic field-effect transistors (Articolo in rivista)
- Type
- Label
- Interface polaron formation in organic field-effect transistors (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- De Filippis G.; Cataudella V.; Fratini S.; Ciuchi S. (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- fasc. (20). American Physical Society. (literal)
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1) CNR-SPIN and Dip. di Scienze Fisiche, Università di Napoli Federico II, I-80126 Napoli, Italy
2) Institut Néel, CNRS and Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9, France
3) CNR-ISC, CNISM and Dipartimento di Fisica, Università dellAquila, via Vetoio, Coppito, I-67010 LAquila, Italy (literal)
- Titolo
- Interface polaron formation in organic field-effect transistors (literal)
- Abstract
- A model describing the low-density carrier state in an organic single-crystal field-effect transistor (FET) with high-? gate dielectrics is studied. The interplay between charge-carrier coupling with intermolecular vibrations in the bulk of the organic material and the long-range interaction induced at the interface with a polar dielectric is investigated. This interplay is responsible for the stabilization of a polaronic state with an internal structure extending on few lattice sites, at much lower coupling strengths than expected from the polar interaction alone. This effect could drive the carriers close to self-trapping in high-? organic FETs without invoking unphysically large values of the carrier-interface interaction. (literal)
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