http://www.cnr.it/ontology/cnr/individuo/prodotto/ID168390
Behaviour of low energy As ions implanted in Si through a thin oxide layer (Contributo in atti di convegno)
- Type
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- Behaviour of low energy As ions implanted in Si through a thin oxide layer (Contributo in atti di convegno) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Alternative label
Ferri M, Parisini A, Solmi S, Bersani M, Giubertoni D and Barozzi M (2004)
Behaviour of low energy As ions implanted in Si through a thin oxide layer
in ITC-Irst European workshop: Recent Advances in Ultra Shallow Junctions 24-25 Nov. 2004 Povo (TN), Povo (TN)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Ferri M, Parisini A, Solmi S, Bersani M, Giubertoni D and Barozzi M (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Institute of Microelectronics and Microsystems CNR-IMM, Bologna, Italy Fondazione Bruno Kessler irst, Povo, Trento 38050, Italy (literal)
- Titolo
- Behaviour of low energy As ions implanted in Si through a thin oxide layer (literal)
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- Autore CNR
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