Behaviour of low energy As ions implanted in Si through a thin oxide layer (Contributo in atti di convegno)

Type
Label
  • Behaviour of low energy As ions implanted in Si through a thin oxide layer (Contributo in atti di convegno) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ferri M, Parisini A, Solmi S, Bersani M, Giubertoni D and Barozzi M (2004)
    Behaviour of low energy As ions implanted in Si through a thin oxide layer
    in ITC-Irst European workshop: Recent Advances in Ultra Shallow Junctions 24-25 Nov. 2004 Povo (TN), Povo (TN)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ferri M, Parisini A, Solmi S, Bersani M, Giubertoni D and Barozzi M (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Institute of Microelectronics and Microsystems CNR-IMM, Bologna, Italy Fondazione Bruno Kessler – irst, Povo, Trento 38050, Italy (literal)
Titolo
  • Behaviour of low energy As ions implanted in Si through a thin oxide layer (literal)
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