Band-Stop Magnetostatic Wave Resonators on Micromachined Silicon Membrane (Contributo in atti di convegno)

Type
Label
  • Band-Stop Magnetostatic Wave Resonators on Micromachined Silicon Membrane (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1117/12.473375 (literal)
Alternative label
  • Marcelli R., Sajin G., Craciunoiu F., Cismaru A. (2003)
    Band-Stop Magnetostatic Wave Resonators on Micromachined Silicon Membrane
    in SPIE International Symposium on Micromachining and Microfabrication, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication II, Conference 4981, San Jose, California, USA, 28-29 January 2003
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Marcelli R., Sajin G., Craciunoiu F., Cismaru A. (literal)
Pagina inizio
  • 156 (literal)
Pagina fine
  • 163 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Proceedings of the SPIE International Symposium on Micromachining and Microfabrication, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication II, Conference 4981 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 4981 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
  • 4981 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM Roma Nat. Institute for Micro- and Nano-Technologies, Bucuresti, Romania (literal)
Titolo
  • Band-Stop Magnetostatic Wave Resonators on Micromachined Silicon Membrane (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 9780819447814 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • AA.VV. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Editor(s): Siegfried W. Janson (literal)
Abstract
  • Two band-stop SERs (resonator A and resonator B) on silicon membrane were obtained and characterized. The frequency tunability domain of these resonators was between 3 GHz and 9.5 GHz ca. obtained by changing the dc magnetic bias field between Happl = 0.02 T and Happl = 0.34 T. The measurements of the S21 parameter demonstrate a suppression of more than 20 dB of the high order modes, showing a good selectivity of this kind of resonator. The rejection ratio was better than -20 dB in the frequency domain from f = 3 GHz to f = 9.5 GHz for the resonator A and better than -20 dB between f = 4.2 GHz and f = 9.5 GHz for the resonator B. These results demonstrate the possibility to obtain microwave band-stop resonators supported on silicon membrane with high isolation and rejection ratios. (literal)
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