Electrical and structural characterization of Fe implanted GaInP (Articolo in rivista)

Type
Label
  • Electrical and structural characterization of Fe implanted GaInP (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.physb.2007.08.166 (literal)
Alternative label
  • B. Fraboni a; T. Cesca b; A. Gasparotto b; G. Mattei b; F. Boscherini a; G. Impellizzeri c; F. Priolo c; R. Jakomin d; M. Longo d; L. Tarricone d (2007)
    Electrical and structural characterization of Fe implanted GaInP
    in Physica. B, Condensed matter (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • B. Fraboni a; T. Cesca b; A. Gasparotto b; G. Mattei b; F. Boscherini a; G. Impellizzeri c; F. Priolo c; R. Jakomin d; M. Longo d; L. Tarricone d (literal)
Pagina inizio
  • 278 (literal)
Pagina fine
  • 281 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 401 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Department of Physics and CNISM, University of Bologna, Vle BertiPichat 6/2, 40137 Bologna, Italy b Department of Physics, University of Padova, Via F. Marzolo 8, I-35131 Padova, Italy c Department of Physics and Astronomy, MATIS CNR-INFM and University of Catania, Via S. Sofia 64, I-95123 Catania, Italy d Department of Physics, University of Parma, Parco Area delle Scienze 7a, I-43100 Parma, Italy (literal)
Titolo
  • Electrical and structural characterization of Fe implanted GaInP (literal)
Abstract
  • We have investigated the structural and electrical properties of GaInP/GaAs epilayers that we have implanted with Fe atoms (190 keV) to produce a shallow high resistivity layer. SIMS, PIXE-channeling and EXAFS were used to provide a structural characterization. Current-voltage analyses as a function of temperature indicate the activation of an efficient and stable electrical compensation process, that we have ascribed to the interplay between a deep donor and a deep acceptor, located at E-C-0.50 eV and E-V + 0.74 eV, respectively. We have focused our attention on the latter deep level, attributed to the Fe2+/3+ related acceptor trap, that we have directly identified and characterized by spectral photocurrent analyses and by capacitance transient spectroscopy carried out under below band gap illumination that stimulated the direct emission/trapping of carriers from the deep trap. (C) 2007 Elsevier B.V. All rights reserved. (literal)
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