Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field (Articolo in rivista)

Type
Label
  • Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.2971/jeos.2009.09006 (literal)
Alternative label
  • M. Ortolani 1; A. Di Gaspare 1; E. Giovine 1; F. Evangelisti 1; V. Foglietti 1; A. Doria 2; G. P. Gallerano 2; E. Giovenale 2; G. Messina 2; I. Spassovsky 2; C. Lanzieri 3; M. Peroni 3; A. Cetronio 3. (2009)
    Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field
    in Journal of the European Optical Society. Rapid publications
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Ortolani 1; A. Di Gaspare 1; E. Giovine 1; F. Evangelisti 1; V. Foglietti 1; A. Doria 2; G. P. Gallerano 2; E. Giovenale 2; G. Messina 2; I. Spassovsky 2; C. Lanzieri 3; M. Peroni 3; A. Cetronio 3. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 4 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 CNR - Istituto di Fotonica e Nanotecnologie, Via Cineto Romano 42, 00156 Rome, Italy; 2 ENEA - Centro Ricerche Frascati, 00044 Frascati, Italy 3 Selex Sistemi Integrati, Via Tiburtina Km 12.400, 00131 Rome, Italy (literal)
Titolo
  • Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field (literal)
Abstract
  • We used AlGaN/GaN high electron mobility transistors as room-temperature direct detectors of radiation at 0.15 THz from a free electron laser, hence 5 times higher than their cutoff frequency of 30 GHz. By near-field active mapping we investigated the antenna-like coupling of the radiation to the transistor channel. We formulate a model for the detection based on self-mixing in the transistor channel. The noise equivalent power is found in the range of 10-7 W/Hz0.5 without any optimization of the device responsivity. Present day AlGaN/GaN fabrication technology may provide operation at higher frequency, integration of amplifiers for improved responsivity and fast switches for multiplexing, which make the detector here described the basic element of a monolithic terahertz focal plane array. (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it