Intermixing-promoted scaling of Ge/Si(100) island sizes (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Intermixing-promoted scaling of Ge/Si(100) island sizes (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Alternative label

• M. De Seta, G. Capellini, F. Evangelisti, C. Spinella (2002)
  Intermixing-promoted scaling of Ge/Si(100) island sizes
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. De Seta, G. Capellini, F. Evangelisti, C. Spinella (literal)

Pagina inizio

• 614 (literal)

Pagina fine

• 619 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 92 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR (literal)

Titolo

• Intermixing-promoted scaling of Ge/Si(100) island sizes (literal)

Abstract

• The shape evolution and the effect of deposition temperature on size and composition of chemical vapor deposition grown Ge/Si(100) islands have been investigated in the deposition temperature range 450–850 °C. It is found that the increase of the growth temperature above 600 °C entails a strong island enlargement due to an increased Si/Ge intermixing. The crystallographic structure of the islands was investigated by transmission electron microscopy. The analysis of the resulting Moire´ pattern reveals that the island lattice deformation decreases with increasing island size and that the effective mismatch e between the silicon substrate and the epilayer decreases with increasing deposition temperature. The island nucleation size, the mean size of coherent islands and the critical size for the insertion of misfit dislocations have been found to scale as e-2, e-2, and e-1, respectively. The agreement of our experimental scaling results with the predictions of theoretical calculation performed for homogeneous heterostructures suggests that, although the Si distribution inside the islands is not homogeneous, the island growth is driven by the mean effective strain. (literal)

Prodotto di

• Microscopia a raggi X: sviluppo di ottiche, strumentazione e metodologie per applicazioni biomediche (MD.P03.031.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)

Autore CNR

• FLORESTANO EVANGELISTI (Unità di personale esterno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Microscopia a raggi X: sviluppo di ottiche, strumentazione e metodologie per applicazioni biomediche (MD.P03.031.002) (Modulo)

Autore CNR di

• FLORESTANO EVANGELISTI (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)