Relaxed state of GexSi1-x islands embedded in Si (Articolo in rivista)

Type
Label
  • Relaxed state of GexSi1-x islands embedded in Si (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • d'Acapito, F; de Seta, M; Capellini, G; di Gaspare, L; Evangelisti, F (2006)
    Relaxed state of GexSi1-x islands embedded in Si
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • d'Acapito, F; de Seta, M; Capellini, G; di Gaspare, L; Evangelisti, F (literal)
Pagina inizio
  • 64 (literal)
Pagina fine
  • 68 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 246 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Roma Tre, I-00146 Rome, Italy (literal)
Titolo
  • Relaxed state of GexSi1-x islands embedded in Si (literal)
Abstract
  • The process of capping Ge islands with Si overlayers is known to have a strong influence on their composition and shape. In this work we have investigated Ge islands on Si produced by chemical vapor deposition covered with Si layers of different thickness. The structural characterization was carried out by X-ray absorption spectroscopy at the Ge-K edge. A noticeable Si uptake by the islands is evident upon capping. Bond length for the first three shells have been analyzed by comparison with models based on the valence force field method. The results evidence that the islands have, on the average, a relaxed state with presumably strained parts in contact with the Si matrix. 2005 Elsevier B.V. All rights reserved. (literal)
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