Localization of He induced nanovoids in buried Si1-xGex thin films (Articolo in rivista)

Type
Label
  • Localization of He induced nanovoids in buried Si1-xGex thin films (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • D'Angelo, D; Mirabella, S; Bruno, E; Terrasi, A; Bongiorno, C; Giannazzo, F; Raineri, V; Bisognin, G; Berti, M (2008)
    Localization of He induced nanovoids in buried Si1-xGex thin films
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D'Angelo, D; Mirabella, S; Bruno, E; Terrasi, A; Bongiorno, C; Giannazzo, F; Raineri, V; Bisognin, G; Berti, M (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 103 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[D'Angelo, D.; Mirabella, S.; Bruno, E.; Terrasi, A.] Catania Univ, Deipartimento Fis & Astron, I-95123 Catania, Italy; [D'Angelo, D.; Mirabella, S.; Bruno, E.; Terrasi, A.] Catania Univ, CNR, INFM, MATIS, I-95123 Catania, Italy; [Bongiorno, C.; Giannazzo, F.; Raineri, V.] CNR, IMM, I-95121 Catania, Italy; [Bisognin, G.; Berti, M.] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; [Bisognin, G.; Berti, M.] Catania Univ, CNR, INFM, MATIS, I-95123 Catania, Italy (literal)
Titolo
  • Localization of He induced nanovoids in buried Si1-xGex thin films (literal)
Abstract
  • The localization of voids in thin Si1-xGex layers after He+ implantation and thermal annealing is reported. A Si/Si1-xGex multilayer grown onto (001) Si was implanted with He+ in the 10-30 keV range, with fluences from 7 X 10(15) up to 1 X 10(16) cm(-2) h. Samples were analyzed by transmission electron microscopy, showing void formation only within the two layers containing Ge or at the film/substrate interface. Our results support the idea that the compressive strain in the Si1-xGex layers induces the nucleation of small cavities and the growth of voids by a mechanism where vacancies are stabilized by He. (c) 2008 American Institute of Physics. (literal)
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