Electrical Properties of Self-Assembled Nano-Schottky Diodes (Articolo in rivista)

Type
Label
  • Electrical Properties of Self-Assembled Nano-Schottky Diodes (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1155/2008/243792 (literal)
Alternative label
  • Ruffino, F; Canino, A; Grimaldi, MG; Giannazzo, F; Roccaforte, F; Raineri, V (2008)
    Electrical Properties of Self-Assembled Nano-Schottky Diodes
    in Journal of Nanomaterials (Print); Hindawi Publishing Corporation, New York (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ruffino, F; Canino, A; Grimaldi, MG; Giannazzo, F; Roccaforte, F; Raineri, V (literal)
Pagina inizio
  • 243792 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Ruffino, F.; Canino, A.; Grimaldi, M. G.] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; [Ruffino, F.; Canino, A.; Grimaldi, M. G.] Univ Catania, CNR, INFM, Dept Phys & Astron,MATIS, I-95123 Catania, Italy; [Giannazzo, F.; Roccaforte, F.; Raineri, V.] CNR, IMM, I-95121 Catania, Italy (literal)
Titolo
  • Electrical Properties of Self-Assembled Nano-Schottky Diodes (literal)
Abstract
  • A bottom-up methodology to fabricate a nanostructured material by Au nanoclusters on 6H-SiC surface is illustrated. Furthermore, a methodology to control its structural properties by thermal-induced self-organization of the Au nanoclusters is demonstrated. To this aim, the self-organization kinetic mechanisms of Au nanoclusters on SiC surface were experimentally studied by scanning electron microscopy, atomic force microscopy, Rutherford backscattering spectrometry and theoretically modelled by a ripening process. The fabricated nanostructured materials were used to probe, by local conductive atomic force microscopy analyses, the electrical properties of nano-Schottky contact Au nanocluster/SiC. Strong e. orts were dedicated to correlate the structural and electrical characteristics: the main observation was the Schottky barrier height dependence of the nano-Schottky contact on the cluster size. Such behavior was interpreted considering the physics of few electron quantum dots merged with the concepts of ballistic transport and thermoionic emission finding a satisfying agreement between the theoretical prediction and the experimental data. The fabricated Au nanocluster/SiC nanocontact is suggested as a prototype of nano-Schottky diode integrable in complex nanoelectronic circuits. Copyright (C) 2008 F. Rufino et al. (literal)
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