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Iso-concentration study of atomistic mechanism of B diffusion in Si (Articolo in rivista)

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Iso-concentration study of atomistic mechanism of B diffusion in Si (Articolo in rivista) (literal)

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De Salvador, D; Napolitani, E; Mirabella, S; Bisognin, G; Impellizzeri, G; Carnera, A; Priolo, F (2007)
Iso-concentration study of atomistic mechanism of B diffusion in Si
in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print); ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

De Salvador, D; Napolitani, E; Mirabella, S; Bisognin, G; Impellizzeri, G; Carnera, A; Priolo, F (literal)

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CNR, INFM, MATIS, I-35131 Padua, Italy; Univ Padua, Dept Phys, I-35131 Padua, Italy; CNR, INFM, MATIS, I-95123 Catania, Italy; Catania Univ, Dept Phys & Astron, I-95123 Catania, Italy (literal)

Titolo

Abstract

B diffuses in crystalline Si by reacting with Si self-interstitial (I) with a frequency g, forming a BI complex that can migrate for an average length lambda. We experimentally measured both g and lambda as a function of the hole concentration p by means of iso-concentration experiments on B delta-layers both under p- and n-doping conditions. On the basis of these data, we propose a comprehensive model that fixes the interplay among free charge, I and BI charge states that determines the B diffusion. Pairing effect with donors was also considered. (C) 2007 Elsevier B.V. All rights reserved. (literal)

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