http://www.cnr.it/ontology/cnr/individuo/prodotto/ID167188
Charge carrier transport in thin films of colloidal CdSe quantum rods (Articolo in rivista)
- Type
- Label
- Charge carrier transport in thin films of colloidal CdSe quantum rods (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.2988136 (literal)
- Alternative label
Persano, A; Leo, G; Manna, L; Cola, A (2008)
Charge carrier transport in thin films of colloidal CdSe quantum rods
in Journal of applied physics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Persano, A; Leo, G; Manna, L; Cola, A (literal)
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- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- \"[Persano, A.; Cola, A.] IMM CNR, Ist Microelettron & Microsistemi, I-73100 Lecce, Italy; [Leo, G.] ISMN CNR, Ist Studio Mat Nanostrutturati, I-00016 Rome, Italy; [Manna, L.] CNR INFM, Natl Nanotechnol Lab, NNL, I-73100 Lecce, Italy (literal)
- Titolo
- Charge carrier transport in thin films of colloidal CdSe quantum rods (literal)
- Abstract
- Phototransport properties of organically capped colloidal CdSe quantum rod thin films deposited by spin coating are studied in air at room temperature in planar electrode configuration. Under optical excitation, the observed current-voltage characteristics and current transients are well described by a resonant tunneling model. A significant and irreversible current quenching of the photoresponse occurs with either the aging of the samples or the flowing of the current itself when above few picoamperes. The process, which is still interpreted in the frame of the model, can be attributed to the charge trapping by the defect states at the barrier between rods with a consequent increase in the barrier height. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.2988136] (literal)
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