http://www.cnr.it/ontology/cnr/individuo/prodotto/ID167157
Size effects on the electrical activation of low-energy implanted B in Si (Articolo in rivista)
- Type
- Label
- Size effects on the electrical activation of low-energy implanted B in Si (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1116/1.2073367 (literal)
- Alternative label
Giannazzo, F; Raineri, V; Bruno, E; Mirabella, S; Impellizzeri, G; Priolo, F; Napolitani, E (2006)
Size effects on the electrical activation of low-energy implanted B in Si
in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Giannazzo, F; Raineri, V; Bruno, E; Mirabella, S; Impellizzeri, G; Priolo, F; Napolitani, E (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR, IMM, Sez Catania, I-95121 Catania, Italy; Univ Catania, INFM, MATIS, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; Univ Padua, INFM, MATIS, I-35131 Padua, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy (literal)
- Titolo
- Size effects on the electrical activation of low-energy implanted B in Si (literal)
- Abstract
- The phenomena related to the electrical activation of low energy implanted B (3 keV,2 X 10(14) B/cm(2)) in laterally submicron confined Si regions were studied by high resolution quantitative scanning capacitance microscopy (SCM). The B diffusion and its precipitation into electrically inactive B-Si interstitial clusters (BICs) were studied by varying the implant window size from 3.2 to 0.38 mu m and annealing at 800 degrees C from 12 to 200 min in N-2 ambient. In particular, the electrically active B fraction is followed by calculating the carrier concentration profile from SCM data with increasing the annealing time. Both the B reactivation and diffusion exhibit a strong dependence on the window width. The higher electrically active B fraction is always found in the narrowest window, which also first recovers the almost complete electrical activation. The B diffusivity enhancement for the 3.2 mu m window size is more than one order of magnitude higher than for the 0.38 mu m window. (c) 2006 American Vacuum Society. (literal)
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