Size effects on the electrical activation of low-energy implanted B in Si (Articolo in rivista)

Type
Label
  • Size effects on the electrical activation of low-energy implanted B in Si (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1116/1.2073367 (literal)
Alternative label
  • Giannazzo, F; Raineri, V; Bruno, E; Mirabella, S; Impellizzeri, G; Priolo, F; Napolitani, E (2006)
    Size effects on the electrical activation of low-energy implanted B in Si
    in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giannazzo, F; Raineri, V; Bruno, E; Mirabella, S; Impellizzeri, G; Priolo, F; Napolitani, E (literal)
Pagina inizio
  • 468 (literal)
Pagina fine
  • 472 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 24 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy; Univ Catania, INFM, MATIS, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; Univ Padua, INFM, MATIS, I-35131 Padua, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy (literal)
Titolo
  • Size effects on the electrical activation of low-energy implanted B in Si (literal)
Abstract
  • The phenomena related to the electrical activation of low energy implanted B (3 keV,2 X 10(14) B/cm(2)) in laterally submicron confined Si regions were studied by high resolution quantitative scanning capacitance microscopy (SCM). The B diffusion and its precipitation into electrically inactive B-Si interstitial clusters (BICs) were studied by varying the implant window size from 3.2 to 0.38 mu m and annealing at 800 degrees C from 12 to 200 min in N-2 ambient. In particular, the electrically active B fraction is followed by calculating the carrier concentration profile from SCM data with increasing the annealing time. Both the B reactivation and diffusion exhibit a strong dependence on the window width. The higher electrically active B fraction is always found in the narrowest window, which also first recovers the almost complete electrical activation. The B diffusivity enhancement for the 3.2 mu m window size is more than one order of magnitude higher than for the 0.38 mu m window. (c) 2006 American Vacuum Society. (literal)
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