Wavy growth onset in strain-balanced InGaAs multi-quantum wells (Articolo in rivista)

Type
Label
  • Wavy growth onset in strain-balanced InGaAs multi-quantum wells (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jcrysgro.2004.09.095 (literal)
Alternative label
  • Nasi L., Ferrari C., Lanzi A., Lazzarini L., Balboni R., Clarke G., Mazzer M., Rohr C., Abbott P., Barnham K.W.J. (2005)
    Wavy growth onset in strain-balanced InGaAs multi-quantum wells
    in Journal of crystal growth; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Nasi L., Ferrari C., Lanzi A., Lazzarini L., Balboni R., Clarke G., Mazzer M., Rohr C., Abbott P., Barnham K.W.J. (literal)
Pagina inizio
  • 65 (literal)
Pagina fine
  • 72 (literal)
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  • 274 (literal)
Rivista
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  • 8 (literal)
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  • 1-2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMEM, Sez Parma, I-43010 Fontanini Parma, Italy; CNR, IMM, Sez Bologna, I-40129 Bologna, Italy; IQE Ltd, Cardiff, S Glam, Wales; CNR, IMM, Sez Lecce, I-73100 Lecce, Italy; Univ London Imperial Coll Sci Technol & Med, London SW7 2BW, England (literal)
Titolo
  • Wavy growth onset in strain-balanced InGaAs multi-quantum wells (literal)
Abstract
  • Different strain-balanced InGaAs/InGaAs multi-quantum wells (MQWs) were grown on (0 0 1) Inp to be used as active layers of thermophotovoltaic devices. Transmission electron microscopy (TEM) and high-resolution X-My diffraction (HRXRD) were performed to correlate the evolution of the layer interfaces from planar to wavy and the consequent nucleation of extended defects with the well and barrier compositions and thicknesses and the growth temperature. The existence of a critical elastic energy density for the wavy growth onset has been experimentally confirmed by changing both the well and barrier misfit and the multi-quantum well layer thickness. A decrease of the gowth temperature shifts the critical energy to higher values. An empirical model to predict the maximum number of layers that can be grown without modulations as a function of the strain energy stored in the MQW period and the growth temperature is presented and successfully applied for the growth of high quality 40 repetitions MQWs with a well misfit of about 1.5 %. (literal)
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