He implantation to control B diffusion in crystalline and preamorphized Si (Articolo in rivista)

Type
Label
  • He implantation to control B diffusion in crystalline and preamorphized Si (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1116/1.2816927 (literal)
Alternative label
  • Bruno, E; Mirabella, S; Priolo, F; Kuitunen, K; Tuomisto, F; Slotte, J; Giannazzo, F; Bongiorno, C; Raineri, V; Napolitani, E (2008)
    He implantation to control B diffusion in crystalline and preamorphized Si
    in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bruno, E; Mirabella, S; Priolo, F; Kuitunen, K; Tuomisto, F; Slotte, J; Giannazzo, F; Bongiorno, C; Raineri, V; Napolitani, E (literal)
Pagina inizio
  • 386 (literal)
Pagina fine
  • 390 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 26 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Bruno, E.; Mirabella, S.; Priolo, F.] Univ Catania, INFM, CNR, MATIS, Sofia 95123, Bulgaria; [Bruno, E.; Mirabella, S.; Priolo, F.] Univ Catania, Dipartimento Fis & Astron, Sofia 95123, Bulgaria; [Kuitunen, K.; Tuomisto, F.; Slotte, J.] Helsinki Univ Technol, Phys Lab, FIN-02015 Tkk Helsinki, Finland; [Giannazzo, F.; Bongiorno, C.; Raineri, V.] CNR, IMM, Sez Catania, I-95121 Catania, Italy; [Napolitani, E.] Univ Padua, INFM, CNR, MATIS, I-35131 Padua, Italy; [Napolitani, E.] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy (literal)
Titolo
  • He implantation to control B diffusion in crystalline and preamorphized Si (literal)
Abstract
  • We demonstrate that He can be a powerful tool to control B diffusion both in crystalline (c-Si) and preamorphized Si (PA-Si). By means of positron annihilation spectroscopy (PAS), we showed in He-implanted c-Si the formation after annealing of large open-volume defects at the implant projected range R-p of He (voids) and of smaller vacancy-type defects toward the surface (nanovoids). In particular, these nanovoids locally suppress the amount of self-interstitials (Is) generated by B implantation, as verified by PAS, eventually reducing B diffusion and leading to a boxlike shape of the B-implanted profile. On the other hand, for B implantation in PA-Si, the authors demonstrated that if He-induced voids are formed between the end-of-range (EOR) defects and the surface, they act as a diffusion barrier for Is coming from the EOR defects. Indeed, this barrier strongly reduces diffusion of B placed in proximity of the surface. (C) 2008 American Vacuum Society. (literal)
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