http://www.cnr.it/ontology/cnr/individuo/prodotto/ID167039

He induced nanovoids for point-defect engineering in B-implanted crystalline Si (Articolo in rivista)

Type

Label

He induced nanovoids for point-defect engineering in B-implanted crystalline Si (Articolo in rivista) (literal)

Anno

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

Alternative label

Bruno, E. (1); Mirabella, S. (1); Priolo, F. (1); Napolitani, E. (2); Bongiorno, C. (3); Raineri, V. (3) (2007)
He induced nanovoids for point-defect engineering in B-implanted crystalline Si
in Journal of applied physics; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Bruno, E. (1); Mirabella, S. (1); Priolo, F. (1); Napolitani, E. (2); Bongiorno, C. (3); Raineri, V. (3) (literal)

Pagina inizio

Pagina fine

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

Rivista

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

Note

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

(1) MATIS CNR-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy; (2) MATIS CNR-INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy; (3) CNR-IMM, Sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy (literal)

Titolo

He induced nanovoids for point-defect engineering in B-implanted crystalline Si (literal)

Abstract

In this paper we present a systematic study on the formation of He ion implantation induced nanovoids in Si and how they influence the self-interstitial (Is) supersaturation, thus affecting the diffusion and electrical activation of implanted boron in crystalline silicon. We implanted He ions into (100)-oriented Si wafers, with doses ranging from 5x10(15) to 8x10(16) He ions/cm(2) and energies ranging from 25 to 110 keV. Then, we implanted B ions (12 keV, 5x10(14) ions/cm(2)). All samples were annealed at 800 degrees C in N-2 atmosphere. We demonstrated the role of nanovoids in reducing B diffusion already at the first stages of postimplantation annealing. The effect has been attributed to the Is trapping by the nanovoids that forces B to assume a boxlike profile. Moreover, we studied the nanovoid distribution as a function of He-implanted dose and energy, demonstrating, by means of Cu gettering experiments, the beneficial effect of increasing dose or decreasing energy of He implantation on the B diffusion and electrical activation. In fact, if the nanovoid density is high in the proximity of implanted B, implantation-related damage can annihilate at the internal dangling bonds of nanovoids, thus consuming the nanovoid layer. The potential of He coimplantation as a method for controlling point-defect distributions in crystalline Si is presented and critically discussed. (literal)

Editore