http://www.cnr.it/ontology/cnr/individuo/prodotto/ID166919
Properties of BaTiO3 thin films deposited by radiofrequency beam discharge assisted pulsed laser deposition (Articolo in rivista)
- Type
- Label
- Properties of BaTiO3 thin films deposited by radiofrequency beam discharge assisted pulsed laser deposition (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Alternative label
Canulescu S., Dinescu G., Epurescu G., Matei D.G., Grigoriu C., Craciun F., Verardi P., Dinescu M. (2004)
Properties of BaTiO3 thin films deposited by radiofrequency beam discharge assisted pulsed laser deposition
in Materials Science and Engineering B
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Canulescu S., Dinescu G., Epurescu G., Matei D.G., Grigoriu C., Craciun F., Verardi P., Dinescu M. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- fasc.(1-3). Elsevier.
EMRS 2003, Symposium I, Functional Metal Oxides - Semiconductor Structures. (literal)
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- NILPRP Bucharest, Romania
CNR-ISC
CNR-IDASC (literal)
- Titolo
- Properties of BaTiO3 thin films deposited by radiofrequency beam discharge assisted pulsed laser deposition (literal)
- Abstract
- BaTiO3 (Barium titanate, BTO) thin films were grown on Pt coated Si substrates by radiofrequency discharge assisted pulsed laser deposition (RF-PLD). A standard experimental set-up consisting in a pulsed YAG-Nd laser working at wavelength of 355 nm and incident fluence in the range of 23 J/cm2 and assisted by a radio frequency plasma discharge (power RF of about 50200 W in a O2 gas flow ranged from 1 to 100 sccm) was used to produce films starting from a BTO ceramic target. Using a special configuration of radio frequency discharge, a beam of excited and/or ionized oxygen species was produced and directed toward the substrate: reactivity increases and oxygen vacancies in deposited thin films were effectively reduced, so thin films dielectric and ferroelectric properties were improved. High dielectric constant values (on the order of hundreds) with losses as low as 0.0080.08 have been obtained: a comparison with films obtained without RF discharge has been carried out. (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Autore CNR di
- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Insieme di parole chiave di