Pulsed laser deposition of perovskite relaxor ferroelectric thin films (Articolo in rivista)

Type
Label
  • Pulsed laser deposition of perovskite relaxor ferroelectric thin films (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.apsusc.2005.07.140 (literal)
Alternative label
  • Scarisoreanu N. (a); Dinescu M. (a); Craciun F. (b); Verardi P. (c); Moldovan A. (a); Purice A. (a); Galassi C. (d) (2006)
    Pulsed laser deposition of perovskite relaxor ferroelectric thin films
    in Applied surface science; Elsevier, Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Scarisoreanu N. (a); Dinescu M. (a); Craciun F. (b); Verardi P. (c); Moldovan A. (a); Purice A. (a); Galassi C. (d) (literal)
Pagina inizio
  • 4553 (literal)
Pagina fine
  • 4557 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0169433205014200 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 252 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • fasc. (13). Elsevier. Proceedings of the European Materials Research society 2005 - Symposium-J: Advances in Laser and Lamp Processing of Functional Materials. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a) NILPRP, Lasers Department, Bucharest, Romania b) CNR-Istituto dei Sistemi Complessi, Rome, Italy c) CNR-Istituto di Acustica, Rome, Italy d) CNR-ISTEC, Faenza, Italy (literal)
Titolo
  • Pulsed laser deposition of perovskite relaxor ferroelectric thin films (literal)
Abstract
  • Structural, dielectric and ferroelectric properties of thin films of La-doped lead zirconate titanate (PLZT) and sodium bismuth titanate–barium titanate (NBT–BT) perovskite relaxor ferroelectric have been investigated. PLZT films were deposited on Pt/Si substrates in oxygen atmosphere by pulsed laser deposition (PLD) and radio frequency (RF) discharge-assisted PLD, using sintered targets with different La content and Zr/Ti ratio, near or at the boundary relaxor ferroelectric. The films are polycrystalline with perovskite cubic or slightly rhombohedral structure. A slim ferroelectric hysteresis loop, typical for relaxors, has been measured for all film sets. Dielectric characterization shows a large value of capacitance tunability and low dielectric loss. However, common problems related to lead diffusion into the metallic electrode layer do not allow one to obtain high capacitance values, due to the formation of an interface layer with low dielectric constant. Lead-free NBT–BT thin films have been deposited on single crystal (1 0 0)-MgO substrates starting from targets with composition at the morphotropic phase boundary between rhombohedral and tetragonal phase. Films deposited by PLD are polycrystalline perovskite with a slight (1 0 0) orientation. Capacitance measurements were performed using interdigital metallic electrodes deposited on the film's top surface and showed high relative dielectric constant, on the order of 1300. (literal)
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