Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures (Articolo in rivista)

Type
Label
  • Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2179136 (literal)
Alternative label
  • Armigliato, A; Spessot, A; Balboni, R; Benedetti, A; Carnevale, G; Frabboni, S; Mastracchio, G; Pavia, G (2006)
    Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures
    in Journal of applied physics; American Institute of Physics, Melville [NY] (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Armigliato, A; Spessot, A; Balboni, R; Benedetti, A; Carnevale, G; Frabboni, S; Mastracchio, G; Pavia, G (literal)
Pagina inizio
  • 64504 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 99 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Biol, I-40129 Bologna, Italy; Univ Modena & Reggio Emilia, INFM, CNR, Natl Res Ctr S3, I-41100 Modena, Italy; Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy; Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England; STMicroelect, I-20041 Agrate Brianza, Italy (literal)
Titolo
  • Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures (literal)
Abstract
  • The deformation induced onto silicon by the formation of Ti self-aligned silicides (salicides) in shallow trench isolation structures has been investigated by the convergent beam electron diffraction technique (CBED) in the transmission electron microscope (TEM). The splitting of the high order Laue zone (HOLZ) lines in the CBED patterns taken in TEM cross sections close to the salicide/silicon interface has been explained assuming that the salicide grains induce a local bending of the lattice planes of the underlying matrix. This bending, which affects in opposite sense the silicon areas below adjacent grains, decreases with the distance from the interface, eventually vanishing at a depth of 300-400 nm. The proposed strain field has been implemented into a fully dynamical simulation of the CBED patterns and has proved to be able to reproduce both the asymmetry of the HOLZ line splitting and the associated subsidiary fringes. This model is confirmed by the shift of a Bragg contour observed in large angle CBED patterns, taken in a cross section cut along a perpendicular direction. The whole experimental results cannot be explained by just a strain relaxation of the TEM cross section, induced by the salicide film onto the underlying silicon. (literal)
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