http://www.cnr.it/ontology/cnr/individuo/prodotto/ID166859

In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors (Articolo in rivista)

Type

Label

In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors (Articolo in rivista) (literal)

Anno

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Alternative label

Felici M. a; Polimeni A. a; Salviati G. b; Lazzarini L. b; Armani N. b; Masia F. a; Capizzi M. a; Martelli F. c,d; Lazzarino M. c,d; Bais G. c,d; Piccin M. c,d; Rubini S. c,d; Franciosi A. c,d (2006)
In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors
in Advanced materials (Weinh., Print); WILEY-V C H VERLAG GMBH, WEINHEIM (Germania)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Felici M. a; Polimeni A. a; Salviati G. b; Lazzarini L. b; Armani N. b; Masia F. a; Capizzi M. a; Martelli F. c,d; Lazzarino M. c,d; Bais G. c,d; Piccin M. c,d; Rubini S. c,d; Franciosi A. c,d (literal)

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Rivista

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Note

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a CNISM, Dipartimento di Fisica, Universita' di Roma La Sapienza, P.le A. Moro 5, 00185 Roma, Italy; b IMEM-CNR, Parco Area delle Scienze 37/A, Localita' Fontanini, 43010 Parma, Italy; c TASC INFM-CNR, Parco Area Delle Scienze, 34012 Trieste, Italy; d CENMAT, Universita' di Trieste, 34127 Trieste, Italy (literal)

Titolo

In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors (literal)

Abstract

The electronic properties in the growth plane of a semiconductor was achieved by in-plane engineering of the effects of hydrogen on dilute nitrides of Galium hetrostructure. The replacement of Arsenic atoms by Nitrogen atoms led to nonlinear effects in the electronic properties of host lattice. Focussing energetic electron beams on the surface of hydrogenated semiconducting Ga hetrostructure displaced Hydrogen atoms from their Nitrogen passivation sites leading to decrease of crystal bandgap in the spatial region. The silver wire that was deposited by standard optical lithography on semiconducting Ga hetrostructure and no light emission was detected at the energy gap of untreated sample outside the wire. A two-dimensional image of wire obtained by cathodoluminescence (CL) spectroscopy was recorded at 5K temperature. The CL intensity corresponding to photons emitted from the well region after impingement of the electron beams was given by an integral equation. (literal)
In-plane bandgap engineering of dilute nitrides by spatially delimited hydrogen irradiation (left, microphotoluminescence image of GaAsN) or displacement (right, cathodoluminescence image of hydrogenated GaAsN) is reported. (literal)

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