Doping in silicon nanocrystals (Articolo in rivista)

Type
Label
  • Doping in silicon nanocrystals (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.susc.2006.12.083 (literal)
Alternative label
  • Ossicini S.; Degoli E.; Iori F.; Pulci O.; Cantele G.; Magri R.; Bisi O.; Trani F.; Ninno D. (2007)
    Doping in silicon nanocrystals
    in Surface science; Academic Press Elsevier, Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ossicini S.; Degoli E.; Iori F.; Pulci O.; Cantele G.; Magri R.; Bisi O.; Trani F.; Ninno D. (literal)
Pagina inizio
  • 2724 (literal)
Pagina fine
  • 2729 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Conference: 5th International Conference on Porous Semiconductors - Science and Technology Location: Sitges, SPAIN Date: MAR 12-17, 2006. Selected and revised paper. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0039602806013173 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 601 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 13 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Modena, CNR, INFM, S3, I-42100 Reggio Emilia, Italy; Univ Modena, Dipartimento Sci & Metodi Ingn, I-42100 Reggio Emilia, Italy; Univ Modena, Dipartimento Fis, I-41100 Modena, Italy; Univ Modena, CNR, INFM, S3, I-41100 Modena, Italy; Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy; Univ Roma Tor Vergata, ETSF, I-00133 Rome, Italy; Univ Naples Federico 2, CNR, INFM, I-80126 Naples, Italy; Univ Naples Federico 2, Dipartimento Fis, I-80126 Naples, Italy (literal)
Titolo
  • Doping in silicon nanocrystals (literal)
Abstract
  • The absorption and, for the first time, the emission spectra of doped silicon nanocrystals have been calculated within a first-principles framework including geometry optimization. Starting from hydrogenated silicon nanocrystals, simultaneous n- and p-type doping with boron and phosphorous impurities have been considered. We found that the B-P co-doping results to be easier than simple 13- or P-doping and that the two impurities tend to occupy nearest neighbours sites inside the nanocrystal itself. The co-doped nanocrystals bandstructure presents band edge states that are localized on the impurities and are responsible of the red-shifted absorption threshold with respect to that of pure un-doped nanocrystals in fair agreement with the experimental outcorne. The emission spectra show a Stokes shift with respect to the absorption due to the structural relaxation after the creation of the electron-hole pair. Moreover, the absorption and emission spectra have been calculated for a small co-doped nanocrystal beyond the single particle approach by introducing the self-energy correction and solving the Bethe-Salpeter equation scheme. Our procedure shows the important role played by the many-body effects. (C) 2006 Elsevier B.V. All rights reserved. (literal)
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