Doping in silicon nanostructures (Articolo in rivista)

Type
Label
  • Doping in silicon nanostructures (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/pssa.200674323 (literal)
Alternative label
  • Iori F.; Ossicini S.; Degoli E.; Luppi E.; Poli R.; Magri R.; Cantele G.; Trani F.; Ninno D. (2007)
    Doping in silicon nanostructures
    in Physica status solidi. A, Applied research; WILEY-V C H VERLAG GMBH, WEINHEIM (Germania)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Iori F.; Ossicini S.; Degoli E.; Luppi E.; Poli R.; Magri R.; Cantele G.; Trani F.; Ninno D. (literal)
Pagina inizio
  • 1312 (literal)
Pagina fine
  • 1317 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Conference: 5th International Conference on Porous Semiconductors - Science and Technology Location: Sitges, SPAIN Date: MAR 12-17, 2006. Selected and revised paper. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://onlinelibrary.wiley.com/doi/10.1002/pssa.200674323/abstract (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 204 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Modena, CNR, INFM S3, I-42100 Reggio Emilia, Italy; Univ Modena, Dipartimento Sci & Metodi Ingn, I-42100 Reggio Emilia, Italy; Univ Modena, CNR, INFM S3, I-41100 Modena, Italy; Univ Modena, Dipartimento Fis, I-41100 Modena, Italy; CNR, INFM Coherentia, I-80126 Naples, Italy; Univ Naples Federico II, Dipartimento Sci Fis, I-80126 Naples, Italy (literal)
Titolo
  • Doping in silicon nanostructures (literal)
Abstract
  • We report on an ab initio study of the structural, electronic and optical properties of boron and phosphorous doped silicon nanocrystals. The scaling with the Si-nanocrystal size is investigated for both the neutral formation energies (FE) and the impurity activation energies. Both these energies scale with the nanocrystal inverse radius. The optical properties reveal the existence of new absorption peaks in the low energy region related to the presence of the impurity. The effects of B and P co-doping show that the formation energies are always smaller than those of the corresponding single-doped cases due to both carriers compensation and minor structural distortion. Moreover in the case of co-doping the electronic and optical properties show a strong reduction of the band gap with respect to the pure silicon nanocrystals that makes possible to engineer the photoluminescence properties of silicon nanocrystals. (literal)
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