Unusual dependence of resistance and voltage noise on current in La1-xSrxMnO3 ultrathin films (Articolo in rivista)

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  • Unusual dependence of resistance and voltage noise on current in La1-xSrxMnO3 ultrathin films (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.75.174431 (literal)
Alternative label
  • Barone C.; Adamo C.; Galdi A.; Orgiani P.; Petrov A.Y.; Quaranta O.; Maritato L.; Pagano S. (2007)
    Unusual dependence of resistance and voltage noise on current in La1-xSrxMnO3 ultrathin films
    in Physical review. B, Condensed matter and materials physics; American Physical Society (APS), College Pk (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Barone C.; Adamo C.; Galdi A.; Orgiani P.; Petrov A.Y.; Quaranta O.; Maritato L.; Pagano S. (literal)
Pagina inizio
  • 1744311 (literal)
Pagina fine
  • 1744317 (literal)
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  • http://prb.aps.org/abstract/PRB/v75/i17/e174431 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 75 (literal)
Rivista
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  • 7 (literal)
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  • 17 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-INFM Coherentia and Dipartimento di Fisica \"ER Caianiello\", Univ Salerno, Baronissi, SA, Italy CNR-INFM Coherentia and Dipartimento Matemat & Informat, Univ Salerno, Baronissi, SA, Italy (literal)
Titolo
  • Unusual dependence of resistance and voltage noise on current in La1-xSrxMnO3 ultrathin films (literal)
Abstract
  • We report on measurements of current-resistance effects in La1-xSrxMnO3 ultrathin films deposited by molecular beam epitaxy. dc transport and voltage noise spectral density analyses have been performed in the temperature range of 10-300 K, and the results are compared with existing theoretical models. A possible connection between the explanation of the electrical transport properties and the two-level tunneling systems model, used for the voltage noise analysis, is proposed. (literal)
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