http://www.cnr.it/ontology/cnr/individuo/prodotto/ID1569

Superconducting-insulator transition driven by out-of-plane carrier localization in Nd1.2Ba1.8Cu3O7+x ultrathin films (Articolo in rivista)

Type

Label

Superconducting-insulator transition driven by out-of-plane carrier localization in Nd1.2Ba1.8Cu3O7+x ultrathin films (Articolo in rivista) (literal)

Anno

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

Alternative label

Salluzzo M.; Ghiringhelli G.; Brookes N.B.; De Luca G.M.; Fracassi F.; Vaglio R. (2007)
Superconducting-insulator transition driven by out-of-plane carrier localization in Nd1.2Ba1.8Cu3O7+x ultrathin films
in Physical review. B, Condensed matter and materials physics (Online); American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Salluzzo M.; Ghiringhelli G.; Brookes N.B.; De Luca G.M.; Fracassi F.; Vaglio R. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

Rivista

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

Note

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

Univ Naples Federico II, CNR, INFM, COHERENTIA, I-80126 Naples, Italy; Univ Naples Federico II, Dipartimento Sci Fisiche, I-80126 Naples, Italy; Politecn Milan, CNR, INFM, COHERENTIA, I-20133 Milan, Italy; Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy; European Synchrotron Radiat Facil, F-38043 Grenoble, France (literal)

Titolo

Superconducting-insulator transition driven by out-of-plane carrier localization in Nd1.2Ba1.8Cu3O7+x ultrathin films (literal)

Abstract

Polarized x-ray absorption spectroscopy (XAS) at the copper L-2,L-3 and oxygen K edges has been used to study the superconducting-insulating (S-I) transition in Nd1.2Ba1.8Cu3O7+x epitaxial films, realized by reducing the thickness from 9 to 6 unit cells. XAS shows that the main differences between the superconducting and the insulating films cannot be ascribed to changes of Cu density of states within the conducting CuO2 planes, but rather to the increase of the 3d(3z)(2)-r(2) states of copper and to the effective reduction of the charge transfer of holes to the oxygen 2p(xy) orbitals in the CuO2 planes. The experimental results show that the S-I transition is related to the hole localization at the Cu sites of the charge reservoir layer, i.e., outside the CuO2 planes, while the electronic states, lying within the conducting planes, appear to be similar in the insulating and superconducting states. (literal)

Editore