Formation and dissolution of D-N complexes in dilute nitrides (Articolo in rivista)

Type
Label
  • Formation and dissolution of D-N complexes in dilute nitrides (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.76.205323 (literal)
Alternative label
  • Berti, M; Bisognin, G; De Salvador, D; Napolitani, E; Vangelista, S; Polimeni, A; Capizzi, M; Boscherini, F; Ciatto, G; Rubini, S; Martelli, F; Franciosi, A (2007)
    Formation and dissolution of D-N complexes in dilute nitrides
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Berti, M; Bisognin, G; De Salvador, D; Napolitani, E; Vangelista, S; Polimeni, A; Capizzi, M; Boscherini, F; Ciatto, G; Rubini, S; Martelli, F; Franciosi, A (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 76 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Padua, CNR, INFM, MATIS, I-35131 Padua, Italy; Univ Padua, Dept Phys, I-35131 Padua, Italy; Sapienza Univ Roma, CNISM, I-00185 Rome, Italy; Sapienza Univ Roma, Dept Phys, I-00185 Rome, Italy; Univ Bologna, Dept Phys, I-40127 Bologna, Italy; Univ Bologna, CNISM, I-40127 Bologna, Italy; Synchrotron SOLEIL, Lorme Merisiers, F-91192 Gif Sur Yvette, France; INFM, CNR, Lab Nazl TASC, I-34012 Trieste, Italy; Univ Trieste, Ctr Excellence Nanostructured Mat, I-34127 Trieste, Italy (literal)
Titolo
  • Formation and dissolution of D-N complexes in dilute nitrides (literal)
Abstract
  • Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically the crystal's electronic and structural properties and represents a prominent example of defect engineering in semiconductors. However, the microscopic origin of D-related effects is still an experimentally unresolved issue. In this paper, we used nuclear reaction analyses and/or channeling, high resolution x-ray diffraction, photoluminescence, and x-ray absorption fine structure measurements to determine how the stoichiometric [D]/[N] ratio and the local structure of the N-D complexes parallel the evolution of the GaAsN electronic and strain properties upon irradiation and controlled removal of D. The experimental results provide the following picture: (i) Upon deuteration, nitrogen-deuterium complexes form with [D]/[N]=3, leading to a neutralization of the N electronic effects in GaAs and to a strain reversal (from tensile to compressive) of the N-containing layer. (ii) A moderate annealing at 250 degrees C gives [D]/[N]=2 and removes the compressive strain, therefore the lattice parameter approaches that of the N-free alloy, whereas the N-induced electronic properties are still passivated. (iii) Finally, annealings at higher temperature (330 degrees C) dissolve the deuterium-nitrogen complexes, and consequently the electronic properties and the tensile strain of the as-grown GaAsN lattice are recovered. Therefore, we conclude that the complex responsible for N passivation contains two deuterium atoms per nitrogen atom, while strain reversal in deuterated GaAsN is due to a complex with a third, less tightly bound deuterium atom. (literal)
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