Large area silicon carbide substrates and heteroepitaxial GaN for power devices applications (LAST - POWER) (Progetti)

Type

• Prodotto della ricerca (Classe)
• Progetti (Classe)

Label

• Large area silicon carbide substrates and heteroepitaxial GaN for power devices applications (LAST - POWER) (Progetti) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• A. Scuderi (coordinator), F.Roccaforte, D. Crippa, A. Schoener, K. Zekentes, Sabine Storm (2010)
  Large area silicon carbide substrates and heteroepitaxial GaN for power devices applications (LAST - POWER)
  
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Scuderi (coordinator), F.Roccaforte, D. Crippa, A. Schoener, K. Zekentes, Sabine Storm (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• Consortium: STMicroelectronics S.r.l. (Coordinator) (ST), Italy LPE S.p.A., Italy Consiglio Nazionale delle Ricerche (CNR) - Istituto per la Microelettronica e Microsistemi (IMM), Italy Epitaxial Technology Center (ETC) S.r.l., Italy Foundation for Research & Technology-Hellas – (FORTH) - Institute of Electronic Structure & Laser, Greece Novasic S.A., France Consorzio Catania Ricerche (CCR), Italy Instytut Wysokich Cisnien PAN (Unipress), Poland Università della Calabria (Unical), Italy SiCrystal AG SY, Germany SEPS Technologies AB, Sweden SenSiC AB, Sweden Acreo AB Department Nanoelectronics, Sweden Aristotle University of Thessaloniki (AUTH), Greece (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• ST Microelectronics CNR - IMM sede, Catania Italy ETC, Italy LPE, Italy FORTH, Greece SiCrystal, Germany Novasic France ACREO, Sweden (literal)

Titolo

• Large area silicon carbide substrates and heteroepitaxial GaN for power devices applications (LAST - POWER) (literal)

Descrizione sintetica

• Progetto ENIAC III call The proposal aims to make EU independent from other developed countries on wide band gap semiconductors high quality material, equipment and advanced processing. This field is of strategic importance since it involves the development of high efficient systems (of high revenue) for applications whenever an electric power is needed: from telecommunication to automotive, from consumer electronics to electrical household appliances, from industrial applications to home automation. In particular, the consortium will develop an European technology including equipments (growth, processing and characterization), processing (growth and device fabrication) and characterization (methods and equipments) till some of the possible applications. The know how will be developed taking advantage of the presence of the most advanced public research centres and reference Universities operating on SiC and GaN technologies , large companies world leaders and many SME from 6 EU countries. 150mm 4H-SiC wafers of high quality are target establishing EU beyond the world wide state of the art, to date at 100mm wafers. Also GaN heteroepitaxy on 150mm Si wafers is considered. (literal)

Prodotto di

• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• PATRICK FIORENZA (Persona)
• FABRIZIO ROCCAFORTE (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)

Insieme di parole chiave

• Keywords of "Large area silicon carbide substrates and heteroepitaxial GaN for power devices applications (LAST - POWER)" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• FILIPPO GIANNAZZO (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• PATRICK FIORENZA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Insieme di parole chiave di

• Keywords of "Large area silicon carbide substrates and heteroepitaxial GaN for power devices applications (LAST - POWER)" (Insieme di parole chiave)