Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.75.245212 (literal)

Alternative label

• Ciatto, G; Harmand, JC; Glas, F; Largeau, L; Le Du, M; Boscherini, F; Malvestuto, M; Floreano, L; Glatzel, P; Mori, RA (2007)
  Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ciatto, G; Harmand, JC; Glas, F; Largeau, L; Le Du, M; Boscherini, F; Malvestuto, M; Floreano, L; Glatzel, P; Mori, RA (literal)

Pagina inizio

• 245212 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 75 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 12 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• European Synchrotron Radiat Facil, F-38043 Grenoble 9, France; Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France; CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France; Univ Bologna, Dept Phys, I-40127 Bologna, Italy; Univ Bologna, CNISM, I-40127 Bologna, Italy; INFM, TASC, I-34012 Trieste, Italy (literal)

Titolo

• Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations (literal)

Abstract

• We investigated the local structure around N and Sb atoms in GaAsSbN/GaAs epilayers as a function of growth conditions and annealing time via soft and hard x-ray absorption spectroscopies in order to find out if short range ordering (SRO) in the group-V sublattice is present. SRO is one of the potential origins of the huge blueshift of the band gap observed upon annealing in these materials. By combining a Sb K- and L- and N K-edge x-ray absorption fine structure spectroscopy analysis, we demonstrate that neither strong Sb clustering nor preferential Sb-N association is possible, and that Sb atoms see a random number of N next nearest neighbors except for growth temperatures smaller than 400 degrees C, for which Sb-N neighbors in the type-V sublattice are in excess with respect to statistical disorder. On the other hand, the evolution of SRO around N anions (breaking of nitrogen pairs and randomization) can play a role in the annealing-induced band gap blueshift. Varying growth conditions and concentration modifies the band gap but, surprisingly, it does not affect the position of the conduction band minimum when Sb is incorporated. (literal)

Prodotto di

• Sviluppo di strumentazione e di metodologie sperimentali avanzate per lo studio delle proprieta strutturali dei materiali con raggi X da sincrotrone (MD.P04.007.001) (Modulo)
• Proprieta' elettroniche e strutturali di sistemi a bassa dimensionalita' (MD.P06.016.001) (Modulo)

Autore CNR

• FEDERICO BOSCHERINI (Persona)
• LUCA FLOREANO (Persona)

Insieme di parole chiave

• Keywords of "Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• LUCA FLOREANO (Persona)
• FEDERICO BOSCHERINI (Persona)

Prodotto

• Sviluppo di strumentazione e di metodologie sperimentali avanzate per lo studio delle proprieta strutturali dei materiali con raggi X da sincrotrone (MD.P04.007.001) (Modulo)
• Proprieta' elettroniche e strutturali di sistemi a bassa dimensionalita' (MD.P06.016.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)

Insieme di parole chiave di

• Keywords of "Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations" (Insieme di parole chiave)