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Morphology and composition of InAs/GaAs quantum dots (Articolo in rivista)
- Type
- Label
- Morphology and composition of InAs/GaAs quantum dots (Articolo in rivista) (literal)
- Anno
- 2007-01-01T00:00:00+01:00 (literal)
- Alternative label
Heun, S; Biasiol, G; Grillo, V; Carlino, E; Sorba, L; Golinelli, GB; Locatelli, A; Mentes, TO; Guo, FZ (2007)
Morphology and composition of InAs/GaAs quantum dots
in Journal of nanoscience and nanotechnology (Print)
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- Heun, S; Biasiol, G; Grillo, V; Carlino, E; Sorba, L; Golinelli, GB; Locatelli, A; Mentes, TO; Guo, FZ (literal)
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- ISI Web of Science (WOS) (literal)
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- CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy; Univ Modena & Reggio Emilia, I-41100 Modena, Italy; Sincrotrone Trieste, SCpA, I-34012 Trieste, Italy; JASRI, SPring8, Sayo, Hyogo 6795198, Japan (literal)
- Titolo
- Morphology and composition of InAs/GaAs quantum dots (literal)
- Abstract
- Surface compositional maps of self-organized InAs/GaAs quantum dots were obtained with laterally resolved photoemission spectroscopy. We found a surface In concentration of about 0.85 at the center of the islands which decreases to 0.75 on the wetting layer. Comparison with concentration values found in the core of similar dots suggests a strong In segregation on the topmost surface layers of the dots and on the surrounding wetting layer. Furthermore, the morphological properties of the dots such as size and density have been measured with plan-view transmission electron microscopy and low energy electron microscopy. (literal)
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