Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires (Articolo in rivista)

Type
Label
  • Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.physe.2006.07.002 (literal)
Alternative label
  • Piccin, M; Bais, G; Grillo, V; Jabeen, F; De Franceschi, S; Carlino, E; Lazzarino, M; Romanato, F; Businaro, L; Rubini, S; Martelli, F; Franciosi, A (2007)
    Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires
    in Physica. E, Low-dimensional systems and nanostructures (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Piccin, M; Bais, G; Grillo, V; Jabeen, F; De Franceschi, S; Carlino, E; Lazzarino, M; Romanato, F; Businaro, L; Rubini, S; Martelli, F; Franciosi, A (literal)
Pagina inizio
  • 134 (literal)
Pagina fine
  • 137 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 37 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, INFM, TASC, Lab Nazl, I-34012 Trieste, Italy; Univ Trieste, Ctr Excellence Nanostruct Mat, I-34127 Trieste, Italy (literal)
Titolo
  • Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires (literal)
Abstract
  • We report on structural and electrical properties of GaAs nanowires (NWs) grown by molecular beam epitaxy (MBE) on GaAs and SiO2 substrates using Au as growth catalyst. Au-Ga particles are observed on the top of the NWs by transmission electron microscopy (TEM). In most of the observed cases, individual particles contain two Au-Ga compositions, in particular orthorhombic AuGa and beta' hexagonal Au7Ga2. The wires grown on GaAs are regularly shaped and tidily oriented on both (1 0 0) and (1 1 1)B substrates. TEM also reveals that the NWs have a wurtzite lattice structure. Electrical transport measurements indicate that nominally undoped NWs are weakly n-type while both Be- and Si-doped wires show p-type behaviour. The effect of the lattice structure on impurity incorporation is briefly discussed. (C) 2006 Elsevier B.V. All rights reserved. (literal)
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