http://www.cnr.it/ontology/cnr/individuo/prodotto/ID144915
Semiconductor substrate suitable for the realisation of electronic and/ or optoelectronic devices and relative manufacturing process (Brevetto)
- Type
- Label
- Semiconductor substrate suitable for the realisation of electronic and/ or optoelectronic devices and relative manufacturing process (Brevetto) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Alternative label
- Titolo
- Semiconductor substrate suitable for the realisation of electronic and/ or optoelectronic devices and relative manufacturing process (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- D'Arrigo G, La Via F (literal)
- Http://www.cnr.it/ontology/cnr/brevetti.owl#ricaduteEconomicheOccupazionali
- Le potenziali ricadute economiche ed occupazionali sono notevoli perchè il processo sviluppato nel brevetto porterebbe alla realizzazione di wafer di 6-8 pollici di diametro di semiconduttori di nuova generazione (SiC e GaN) a costi molto bassi rispetto a quelli attuali. (literal)
- Numero brevetto
- US2010013057 (A1) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
- A semiconductive substrate is described that is suitable for realising electronic and/ or optoelectronic devices of the type comprising at least one substrate, in particular of single crystal silicon, and an overlying layer of single crystal silicon. Advantageously, according to the invention, the semiconductive substrate comprises at least one functional coupling layer suitable for reducing the defects linked to the differences in the materials used. In particular, the functional coupling layer comprises a corrugated portion made in the layer of single crystal silicon and suitable for reducing the defects linked to the differences in lattice constant of such materials used.; Alternatively, the functional coupling layer comprises a porous layer arranged between the substrate of single crystal silicon and the layer of single crystal silicon and suitable for reducing the stress caused by the differences between the thermal expansion coefficients of the materials used. A manufacturing process of such a semiconductive substrate is also described. (literal)
- Anno di deposito
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-IMM sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy (literal)
- Titolo
- Semiconductor substrate suitable for the realisation of electronic and/ or optoelectronic devices and relative manufacturing process (literal)
- Http://www.cnr.it/ontology/cnr/brevetti.owl#trasferimentoBrevetto
- E' previsto il trasferimento del brevetto all'Epitaxial Technology Center srl che si è mostrata molto interessata al brevetto e sono in corso le trattative per la cessione. (literal)
- Prodotto di
- Autore CNR
Incoming links:
- Autore CNR di
- Prodotto